HWL26YC

Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• 18 dB Typical Gain at 2.4 GHz• 5V to 10V OperationSpecifications VDS Drain to Source Voltage +15V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current 1mA TCH Chann...

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HWL26YC Picture
SeekIC No. : 004367993 Detail

HWL26YC: Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• 18 dB Typical Gain at 2.4 GHz• 5V to 10V OperationSpecifications VDS Drain to Source Voltage +15V ...

floor Price/Ceiling Price

Part Number:
HWL26YC
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

• Low Cost GaAs Power FET
• Class A or Class AB Operation
• 18 dB Typical Gain at 2.4 GHz
• 5V to 10V Operation





Specifications

VDS Drain to Source Voltage +15V
VGS Gate to Source Voltage -5V
ID Drain Current IDSS
IG Gate Current 1mA
TCH Channel Temperature 175
TSTG Storage Temperature -65 to +175
PT* Power Dissipation 1.7W





Description

The HWL26YC is a medium power GaAs FET designed for various L-band & S-band applications.






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