Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• 18 dB Typical Gain at 2.4 GHz• 5V to 10V OperationSpecifications VDS Drain to Source Voltage +15V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current 1mA TCH Chann...
HWL26YC: Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• 18 dB Typical Gain at 2.4 GHz• 5V to 10V OperationSpecifications VDS Drain to Source Voltage +15V ...
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VDS | Drain to Source Voltage | +15V |
VGS | Gate to Source Voltage | -5V |
ID | Drain Current | IDSS |
IG | Gate Current | 1mA |
TCH | Channel Temperature | 175 |
TSTG | Storage Temperature | -65 to +175 |
PT* | Power Dissipation | 1.7W |
The HWL26YC is a medium power GaAs FET designed for various L-band & S-band applications.