Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• Greater than 14.5 dB Gain• 5V to 10V OperationSpecifications Symbol Parameter Rating VDS Drain-Source Voltage +15 V VGS Gate-Source Voltage -5 V ID Drain Current Idss IG Gate Curre...
HWL34YRF: Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• Greater than 14.5 dB Gain• 5V to 10V OperationSpecifications Symbol Parameter Rating VDS Drain-...
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Symbol | Parameter | Rating |
VDS | Drain-Source Voltage | +15 V |
VGS | Gate-Source Voltage | -5 V |
ID | Drain Current | Idss |
IG | Gate Current | 6mA |
PT | Continuous Dissipation | 12 W |
TCH | Channel Temperature | 175 |
TSTG | Storage Temperature | - 65 to +175 |