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HWF1687RA

Features: • Output Power: P1dB=31.5 dBm (typ.)• High Gain: GL=16 dB (typ.)• High Efficiency: PAE =45% (typ.)• High Linearity: IP3=46 dBm (typ.)• Class A or Class AB Operation• Low CostSpecifications VDS[1] Drain to Source Voltage +15V VGS Gate to Sour...

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SeekIC No. : 004367985 Detail

HWF1687RA: Features: • Output Power: P1dB=31.5 dBm (typ.)• High Gain: GL=16 dB (typ.)• High Efficiency: PAE =45% (typ.)• High Linearity: IP3=46 dBm (typ.)• Class A or Class AB Ope...

HWF1687RA Data Sheet

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Part Number:
HWF1687RA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

• Output Power: P1dB=31.5 dBm (typ.)
• High Gain: GL=16 dB (typ.)
• High Efficiency: PAE =45% (typ.)
• High Linearity: IP3=46 dBm (typ.)
• Class A or Class AB Operation
• Low Cost


Specifications

VDS[1] Drain to Source Voltage +15V
VGS Gate to Source Voltage -5V
ID Drain Current IDSS
IG Gate Current 3 mA
TCH Channel Temperature 175
TSTG Storage Temperature -65 to +175
PT [2] Power Dissipation 6 W

[1] Hexawave recommends that the quiescent drain-source operating voltage (VDS) should not exceed 10 Volts.
[2] Mounted on an infinite heat sink.


Description

The HWF1687RA is a medium power GaAs MESFET designed for various RF and Microwave applications. It is presently offered in a low cost, surface-mountable ceramic package.




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