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The 1-Gbit DDR2 DRAM HYB18TC1G160BF is a high-speed Double-Data-Rate-Two CMOS Synchronous DRAM device containing 1,073,741,824 bits and internally configured as anoctal quadbank DRAM. The 1-Gb device is organized as eith...
Vendor:Other Category:Other
The 1-Gb DDR2 DRAM HYB18TC1G160AF is a high-speed Double-Data-Rate- Two CMOS Synchronous DRAM device containing 1,073,741,824 bits and internally configured as anoctal quadbank DRAM. The 1-Gb device is organized as eithe...
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The 512-Mb DDR2 DRAM HYB18T512AF is a high-speed Double-Data-Rate-2 CMOS Synchronous DRAM device containing 536,870,912 bits and internally configured as a quad-bank DRAM. The 512-Mb device is organized as either 32 ...
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The 512-Mb DDR2 DRAM HYB18T512AC is a high-speed Double-Data-Rate-2 CMOS Synchronous DRAM device containing 536,870,912 bits and internally configured as a quad-bank DRAM. The 512-Mb device is organized as either 32 ...
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Mfg:Qimonda 07+ Vendor:Other Category:Other
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Mfg:Qimonda D/C:07+ Vendor:Other Category:Other
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Mfg:Qimonda Vendor:Other Category:Other
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Mfg:INFINEON Pack:BGA D/C:06+ Vendor:Other Category:Other
The 512-Mb DDR2 DRAM HYB18T512800AF is a high-speed Double-Data-Rate-2 CMOS Synchronous DRAM device containing 536,870,912 bits and internally configured as a quad-bank DRAM. The 512-Mb device is organized as either 32 M...
Mfg:INFINEON Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Mfg:07+ Vendor:Other Category:Other
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The 512-Mb DDR2 DRAM HYB18T512400AF is a high-speed Double-Data-Rate-2 CMOS Synchronous DRAM device containing 536,870,912 bits and internally configured as a quad-bank DRAM. The 512-Mb device is organized as either 32 M...
Mfg:Qimonda Vendor:Other Category:Other
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Mfg:QIMONDA Pack:TFBGA Vendor:Other Category:Other
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Mfg:INFINEON Pack:BGA D/C:06+ Vendor:Qimonda Category:Integrated Circuits (ICs)
IC DDR2 SDRAM 512MB 84-TFBGA
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Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
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Mfg:FBGA Pack:Infineon D/C:03+ Vendor:Other Category:Other
The 512-Mb DDR2 DRAM HYB18T512160AF is a high-speed Double-Data-Rate-2 CMOS Synchronous DRAM device containing 536,870,912 bits and internally configured as a quad-bank DRAM. The 512-Mb device is organized as either 32 M...
Vendor:Other Category:Other
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Mfg:Qimonda 07+ Vendor:Other Category:Other
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Mfg:INF Pack:BGA D/C:07+ Vendor:Other Category:Other
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The 256Mb Double-Data-Rate-2 (DDR2) DRAMs HYB18T256800AF are highspeed CMOS Double Data Rate 2 Synchronous DRAM devices containing 268,435,456 bits and are internally configured as a quad-bank DRAMs. The 256Mb chip is ...
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The 256-Mbit Double-Data-Rate-Two SDRAM HYB18T256400BF-25F is a highspeed CMOS Synchronous DRAM device containing 268,435,456 bits and internally configured as a quad-bank DRAM. The device is organized as either 16 Mbit ...
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Mfg:INF Pack:BGA D/C:07+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 256Mb Double-Data-Rate-2 (DDR2) DRAMs HYB18T256400AF are highspeed CMOS Double Data Rate 2 Synchronous DRAM devices containing 268,435,456 bits and are internally configured as a quad-bank DRAMs. The 256Mb chip is ...
Vendor:Other Category:Other
The Infineon 256-Mbit GDDR3 DRAM HYB18T256324F22 [600MHz]is a high speed memory device, designed for high bandwidth intensive applications like PC graphics systems. The chip's quad bank architecture is optimized for ...
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The Infineon 256-Mbit GDDR3 DRAM HYB18T256324F20 [600MHz]is a high speed memory device, designed for high bandwidth intensive applications like PC graphics systems. The chip's quad bank architecture is optimized for ...
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The Infineon 256-Mbit GDDR3 DRAM HYB18T256324F16 [600MHz]is a high speed memory device, designed for high bandwidth intensive applications like PC graphics systems. The chip's quad bank architecture is optimized for ...
Pack:Qimonde(256) D/C:BGA Vendor:Other Category:Other
Mfg:QIMONDA Pack:BGA Vendor:Other Category:Other
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The 256Mb Double-Data-Rate-2 (DDR2) DRAMs HYB18T256160AF are highspeed CMOS Double Data Rate 2 Synchronous DRAM devices containing 268,435,456 bits and are internally configured as a quad-bank DRAMs. The 256Mb chip is ...
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