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The HYB3117805BSJ -50 is a 16 MBit dynamic RAM organized as 2 097 152 words by 8-bits. The HYB 3117805BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide ...
Vendor:Other Category:Other
The HYB3117800BSJ-70 is a 16 MBit dynamic RAM organized as 2097152 words by 8-bits. The HYB 3117800BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide ope...
Vendor:Other Category:Other
The HYB3117800BSJ-60 is a 16 MBit dynamic RAM organized as 2097152 words by 8-bits. The HYB 3117800BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide ope...
Vendor:Other Category:Other
The HYB3117800BSJ-50 is a 16 MBit dynamic RAM organized as 2097152 words by 8-bits. The HYB 3117800BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide ope...
Vendor:Other Category:Other
The HYB3117405BJ/BT(L)-70 is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The HYB 3116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to prov...
Vendor:Other Category:Other
The HYB3117405BJ/BT(L)-60 is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The HYB 3116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to prov...
Vendor:Other Category:Other
The HYB3117405BJ/BT(L)-50 is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The HYB 3116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to prov...
Vendor:Other Category:Other
The HYB3116405BJ/BT(L)-70 is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The HYB 3116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to prov...
Vendor:Other Category:Other
The HYB3116405BJ/BT(L)-60 is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The HYB 3116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to prov...
Vendor:Other Category:Other
The HYB3116405BJ/BT(L)-50 is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The HYB 3116(7)405BJ/BT(L) utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to prov...
Vendor:Other Category:Other
The HYB3116165BST-60 is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits. It utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margin...
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The HYB3116160BSJ-70 is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits. The HYB 3116(8)160BSJ/BST utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provid...
Vendor:Other Category:Other
The HYB3116160BSJ-60 is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits. The HYB 3116(8)160BSJ/BST utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provid...
Vendor:Other Category:Other
The HYB3116160BSJ-50/BST is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits. The HYB 3116(8)160BSJ/BST utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to pr...
Mfg:SIRENZA Pack:17 D/C:98+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 256MBit Mobile-RAM HYB25L256160AF is a new generation of low power, four bank synchronous DRAM organized as 4 banks x 4 Mbit x 16 with additional features for mobile applications. The synchronous Mobile-RAM achieve...
Mfg:N/A Pack:BGA D/C:08+ Vendor:Other Category:Other
The 256-Mbit Mobile-RAM HYB25L256160AC is a new generation of low power, four bank synchronous DRAM organized as 4 banks x 4 Mbit x 16 with additional features for mobile applications. The synchronous Mobile-RAM achieves...
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Mfg:Qimonda Vendor:Other Category:Other
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Mfg:200 Pack:QIMONDA D/C:SSOP Vendor:Other Category:Other
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Mfg:BGA Pack:QIMONDA D/C:07+ Vendor:Other Category:Other
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Mfg:INFINEON Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
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Mfg:Qimonda 07+ Vendor:Other Category:Other
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The 256 Mbit Double-Data-Rate SDRAM HYB25DC256800F is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM.The 256 Mbit Double-Data-Rate SDRAM HYB25...
Vendor:Other Category:Other
The 256 Mbit Double-Data-Rate SDRAM HYB25DC256800E is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM.The 256 Mbit Double-Data-Rate SDRAM HYB25...
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The 256 Mbit Double-Data-Rate SDRAM HYB25DC256800C is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM.The 256 Mbit Double-Data-Rate SDRAM HYB25...
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Mfg:INFINEON D/C:07+ Vendor:Other Category:Other
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The 256 Mbit Double-Data-Rate SDRAM HYB25DC256160T is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM.The 256 Mbit Double-Data-Rate SDRAM HYB25...
Vendor:Other Category:Other
The 256 Mbit Double-Data-Rate SDRAM HYB25DC256160F is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM.The 256 Mbit Double-Data-Rate SDRAM HYB25...
Vendor:Other Category:Other
The 256 Mbit Double-Data-Rate SDRAM HYB25DC256160E is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM.The 256 Mbit Double-Data-Rate SDRAM HYB25...
Vendor:Other Category:Other
Mfg:QIMONDA Pack:BGA Vendor:Other Category:Other
Mfg:HYB D/C:06+/07+ Vendor:Other Category:Other
Mfg:QIMONDA Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 256 Mbit Double-Data-Rate SDRAM HYB25DC256160C is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM.The 256 Mbit Double-Data-Rate SDRAM HYB25...
Vendor:Other Category:Other
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Mfg:QIMONDA D/C:2008 Vendor:Other Category:Other
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The 256Mb DDR SDRAM HYB25D800T is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM.The 256Mb DDR SDRAM HYB25D800T uses a double-data-rate archit...
Vendor:Other Category:Other
The 256Mb DDR SDRAM HYB25D800L is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM.The 256Mb DDR SDRAM HYB25D800L uses a double-data-rate archit...
Vendor:Other Category:Other
The 256Mb DDR SDRAM HYB25D800B is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM.The 256Mb DDR SDRAM HYB25D800B uses a double-data-rate archit...
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Mfg:Qimonda D/C:08+ Vendor:Other Category:Other
Mfg:Qimonda Vendor:Other Category:Other
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Mfg:Qimonda Vendor:Other Category:Other
Mfg:Qimonda Vendor:Other Category:Other
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Mfg:Infineon D/C:08+ Vendor:Other Category:Other
Mfg:INF D/C:06+ Vendor:Other Category:Other
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Mfg:INF D/C:06+ Vendor:Other Category:Other
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The 512Mbit Double Data Rate SDRAM HYB25D512800AT-7F is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. The 512Mbit Double Data Rate SDRAM HYB...
Vendor:Other Category:Other
The 512Mbit Double Data Rate SDRAM HYB25D512800AT-7 is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. The 512Mbit Double Data Rate SDRAM HYB2...
Vendor:Other Category:Other
The 512Mbit Double Data Rate SDRAM HYB25D512800AT-6 is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. The 512Mbit Double Data Rate SDRAM HYB2...
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The 512Mbit Double Data Rate SDRAM HYB25D512800AT is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. The 512Mbit Double Data Rate SDRAM HYB25D...
Vendor:Other Category:Other
The 512Mb DDR SDRAM HYB25D512800 is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. The 512Mb DDR SDRAM HYB25D512800 uses a double-data-rate a...
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