HYB3116165BST-60

The HYB3116165BST-60 is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits. It utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. The features of TUA 6110XS are as follows: (1)1 048 576 words by 16-bit organization; (2)0 to 70 operating temperature; (3)single + 3.3 V (±0.3 V) supply; (4)low power dissipation: max. 324 active mW; (5)output unlatched at cycle end allows two-dimensional chip selection; (6)read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh; (7)self refresh; (8)hyper page mode (EDO) capability; (9)2 CAS / 1 WE; (10)all inputs, outputs and clocks fully LV-TTL-compatible.

What comes next is about the HYB3116165BST-60 maximum ratings: (1)operating temperature range: 0 to 70 °C; (2)storage temperature range: 55 to 150 °C; (3)soldering time: 10 s; (4)input/output voltage: -0.5 to min (Vcc+0.5,4.6) V; (5)power supply voltage: -0.5 V to 4.6 V; (6)power dissipation: 1.0 W; (7)data out current (short circuit): 50 mA. Stresses above may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

The following is about the HYB3116165BST-60 electrical characteristics: (1)input high voltage: 2.0V min and Vcc+0.5 V max at all voltages are referenced to VSS; (2)input low voltage:  - 0.5V min and 0.8 V max at all voltages are referenced to VSS; (3)TTL output high voltage: 2.4 V min at all voltages are referenced to VSS; (4)TTL output low voltage (IOUT = 2 mA) : - 0.4 V max at all voltages are referenced to VSS; (5)CMOS output high voltage (IOUT = - 100  A): Vcc-0.2 V min at all voltages are referenced to VSS; (6)CMOS output low voltage (IOUT = 100  A): - 0.2 V max at all voltages are referenced to VSS).