HYB25L256160AF

  The 256MBit Mobile-RAM HYB25L256160AF is a new generation of low power, four bank synchronous DRAM organized as 4 banks x 4 Mbit x 16 with additional features for mobile applications. The synchronous Mobile-RAM achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock.
  The device HYB25L256160AF adds new features to the industry standards set for synchronous DRAM products. Parts of the memory array can be selected for Self-Refresh and the refresh period during Self-Refresh is programmable in 4 steps which drastically reduces the self refresh current, depending on the case temperature of the components in the system application. In addition a "Deep Power Down Mode" is available. Operating the four memory banks in an interleave fashion allows random access operation to occur at higher rate. A sequential and gapless data rate is possible depending on burst length, CAS latency and speed grade of the device.
  The Mobile-RAM HYB25L256160AF is housed in a FBGA "chip-size" package. The Mobile-RAM is available in the commercial (0 °C TC 70 °C) and extended (25 °C to +85 °C) temperature range.