Features: • 2 097 152 words by 8-bit organization• 0 to 70 °C operating temperature• Performance• Single + 3.3 V (± 0.3 V) supply• Low power dissipationmax. 432 mW active (-50 version)max. 396 mW active (-60 version)max. 360 mW active (-70 version)7.2 mW standby (LV-T...
HYB3117805BSJ -50: Features: • 2 097 152 words by 8-bit organization• 0 to 70 °C operating temperature• Performance• Single + 3.3 V (± 0.3 V) supply• Low power dissipationmax. 432 mW acti...
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Features: • 1 048 576 words by 16-bit organization• 0 to 70 °C operating temperature...
Features: • 1 048 576 words by 16-bit organization• 0 to 70 °C operating temperature...
Features: • 1 048 576 words by 16-bit organization• 0 to 70 °C operating temperature...
• 2 097 152 words by 8-bit organization
• 0 to 70 °C operating temperature
• Performance
• Single + 3.3 V (± 0.3 V) supply
• Low power dissipation
max. 432 mW active (-50 version)
max. 396 mW active (-60 version)
max. 360 mW active (-70 version)
7.2 mW standby (LV-TTL)
3.6 mW standby (CMOS)
• Read, write, read-modify-write, CAS-before-RAS refresh,RAS-only refresh, hidden refresh, self refresh and test mode
• Hyper page mode (EDO) capability
• All inputs, outputs and clocks fully TTL-compatible
• 2048 refresh cycles / 32 ms (2k-Refresh)
• Plastic Package: P-SOJ-28-3 400 mil
Absolute Maximum Ratings
Operating temperature range .........................................................................................0 to 70 °C
Storage temperature range...................................................................................... 55 to 150 °C
Input/output voltage ...............................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage...................................................................................................-1.0V to 4.6 V
Power dissipation.................................................................................................................... 0.5 W
Data out current (short circuit) ............................................................................................... 50 mA
Note:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
The HYB3117805BSJ -50 is a 16 MBit dynamic RAM organized as 2 097 152 words by 8-bits. The HYB 3117805BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 3117805BSJ to be packaged in a standard SOJ 28 plastic package with 400 mil width. These packages HYB3117805BSJ -50 provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. System-oriented features include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high-performance logic device families such as Schottky TTL.