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HYB25L256160AC

Features: 16 Mbits * 16 organisationFully synchronous to positive clock edgeFour internal banks for concurrent operationData mask (DM) for byte control with write and read dataProgrammable CAS latency: 2 or 3Programmable burst length: 1, 2, 4, 8, or full pageProgrammable wrap sequence: sequential ...

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SeekIC No. : 004368896 Detail

HYB25L256160AC: Features: 16 Mbits * 16 organisationFully synchronous to positive clock edgeFour internal banks for concurrent operationData mask (DM) for byte control with write and read dataProgrammable CAS laten...

HYB25L256160AC Data Sheet

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Part Number:
HYB25L256160AC
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

16 Mbits * 16 organisation
Fully synchronous to positive clock edge
Four internal banks for concurrent operation
Data mask (DM) for byte control with write and read data
Programmable CAS latency: 2 or 3
Programmable burst length: 1, 2, 4, 8, or full page
Programmable wrap sequence: sequential or interleaved
Random column address every clock cycle (1-N rule)
Deep power down mode
Extended mode register for Mobile-RAM features
Temperature compensated self refresh with on-die temperature sensor
Partial array self refresh
Power down and clock suspend mode
Automatic and controlled precharge command
Auto refresh mode (CBR)
8192 refresh cycles / 64 ms 
Self-refresh with programmble refresh period
Programmable power reduction feature by partial array activation during self-refresh
VDDQ= 1.8V or 2.5 V
VDD= 2.5 V
P-TFBGA-54 package 9-by-6-ball array with 3 depopulated rows (12 x 8 mm2 )
Operating temperature range: commerical (0 to 70 )


Specifications

Parameter Symbol Values Unit Note/ Test Condition
min. typ. max.
Voltage on I/O pins relative to VSS VIN , VOUT 0.7 - VDD  +0.5 V -
Voltage on I/O pins relative to VSS VIN , VOUT 0.7 - +3.6 V -
Voltage on VDD supply relative to VSS VDD 0.7 - +3.6 V -
Voltage on VDDQ supply relative to VSS VDDQ0.7 - +3.6 V -
Operating Case Temperature (commercial) TCASE0-+70 -
Storage Temperature (Plastic) TSTG55 - +150 -
Power Dissipation PD--0.7W-
Short Circuit Output Current IOUT-50-mA-
Attention:Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit


Description

The 256-Mbit Mobile-RAM HYB25L256160AC is a new generation of low power, four bank synchronous DRAM organized as 4 banks x 4 Mbit x 16 with additional features for mobile applications. The synchronous Mobile-RAM achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock.
The device HYB25L256160AC adds new features to the industry standards set for synchronous DRAM products. Parts of the memory array can be selected for Self-Refresh and the refresh period during Self-Refresh is programmable in 4 steps which drastically reduces the self refresh current, depending on the case temperature of the components in the system application. In addition a "Deep Power Down Mode" is available. Operating the four memory banks in an interleave fashion allows random access operation to occur at higher rate. A sequential and gapless data rate is possible depending on burst length, CAS latency and speed grade of the device.
The Mobile-RAM HYB25L256160AC is housed in a FBGA "chip-size" package. The Mobile-RAM is available in the commerical (0 to 70 ) temperature range.




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