Features: • Plastic Packaged GaAs Power FET• Suitable for Commercial Wireless Applications• High Efficiency• 3V OperationSpecifications VDS Drain to Source Voltage +7V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current ...
HWL32NPA: Features: • Plastic Packaged GaAs Power FET• Suitable for Commercial Wireless Applications• High Efficiency• 3V OperationSpecifications VDS Drain to Source Voltage ...
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VDS |
Drain to Source Voltage |
+7V |
VGS |
Gate to Source Voltage |
-5V |
ID |
Drain Current |
IDSS |
IG |
Gate Current |
6 mA |
TCH |
Channel Temperature |
150 |
TSTG |
Storage Temperature |
-65 to +150 |
PT |
Power Dissipation |
2.8 Watt |
The HWL32NPA is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.