Features: • Output Power: P1dB=30 dBm (typ.)• High Gain: GL=16 Db (typ.)• High Efficiency: PAE =45% (typ.)• High Linearity: IP3=45 dBm (typ.)• Low CostSpecifications VDS [1] Drain to Source Voltage +15V VGS Gate to Source Voltage -5V ID Drain Current ...
HWF1686RA: Features: • Output Power: P1dB=30 dBm (typ.)• High Gain: GL=16 Db (typ.)• High Efficiency: PAE =45% (typ.)• High Linearity: IP3=45 dBm (typ.)• Low CostSpecifications ...
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VDS [1] | Drain to Source Voltage | +15V |
VGS | Gate to Source Voltage | -5V |
ID | Drain Current | IDSS |
IG | Gate Current | 2 mA |
TCH | Channel Temperature | 175°C |
TSTG | Storage Temperature | -65 to +175°C |
PT [2] | Power Dissipation | 3.5 W |
The HWF1686RA is a medium power GaAs MESFET designed for various RF and Microwave applications. It is presently offered in a low cost, surface-mountable ceramic package.