Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• 11 dB Typical Gain at 4 GHz• 5V to 10V OperationSpecifications VDS Drain to Source Voltage +15V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Drain Current 3m...
HWC30NC: Features: • Low Cost GaAs Power FET• Class A or Class AB Operation• 11 dB Typical Gain at 4 GHz• 5V to 10V OperationSpecifications VDS Drain to Source Voltage +15V...
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VDS |
Drain to Source Voltage |
+15V |
VGS |
Gate to Source Voltage |
-5V |
ID |
Drain Current |
IDSS |
IG |
Drain Current |
3mA |
TCH |
Channel Temperature |
175 |
TSTG |
Storage Temperature |
-65 to +175 |
PT |
Power Dissipation |
6W |
The HWC30NC is a medium power GaAs FET designed for various L-band & S-band applications.