HWL27NPB

Features: • Plastic Packaged GaAs Power FET• Suitable for Commercial Wireless Applications• High Efficiency• 3V OperationSpecifications VDS Drain to SourceVoltage +15V VGS Gate to Source Voltage -5V IO Drain Current IDSS IG Gate Current 2 mA TCH Ch...

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SeekIC No. : 004367995 Detail

HWL27NPB: Features: • Plastic Packaged GaAs Power FET• Suitable for Commercial Wireless Applications• High Efficiency• 3V OperationSpecifications VDS Drain to SourceVoltage +15V...

floor Price/Ceiling Price

Part Number:
HWL27NPB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Plastic Packaged GaAs Power FET
• Suitable for Commercial Wireless Applications
• High Efficiency
• 3V Operation





Specifications

VDS Drain to Source
Voltage
+15V
VGS Gate to Source Voltage -5V
IO Drain Current IDSS
IG Gate Current 2 mA
TCH Channel Temperature 150
TSTG Storage Temperature -65 to +175
Pt Power Dissipation 0.7 W





Description

The HWL27NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.






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