Features: • Plastic Packaged GaAs Power FET• Suitable for Commercial Wireless Applications• High Efficiency• 3V OperationSpecifications VDS Drain to SourceVoltage +15V VGS Gate to Source Voltage -5V IO Drain Current IDSS IG Gate Current 2 mA TCH Ch...
HWL27NPB: Features: • Plastic Packaged GaAs Power FET• Suitable for Commercial Wireless Applications• High Efficiency• 3V OperationSpecifications VDS Drain to SourceVoltage +15V...
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VDS | Drain to Source Voltage |
+15V |
VGS | Gate to Source Voltage | -5V |
IO | Drain Current | IDSS |
IG | Gate Current | 2 mA |
TCH | Channel Temperature | 150 |
TSTG | Storage Temperature | -65 to +175 |
Pt | Power Dissipation | 0.7 W |
The HWL27NPB is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.