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Index T : TC621CEOA,TC621CCPA,TC581282AXB,
TC621CEOA
Mfg:TC Pack:SOP-8 D/C:08+ Vendor:Other Category:Other
TC621CCPA
Pack:98+ D/C:DIP-8 Vendor:Other Category:Other
TC621CCOA713
Mfg:MICROCHIP D/C:08+PBF Vendor:Other Category:Other
TC621CCOA
Mfg:MICROCHIP Pack:SOP-8 D/C:08+ Vendor:Other Category:Other
TC6216M
Mfg:TAMARACK Pack:QFP D/C:08+ Vendor:Other Category:Other
TC6216M is a stand-alone 16 ports 10/100 unmanaged switch controller designed for low cost high performance solutions. In addition to the basic functions of unmanaged switches it provides features usually associated with...TC621
Vendor:Other Category:Other
TC620 and TC621 are programmable logic output temperature detectors designed for use in thermal management applications. The TC620 features an on-board temperature sensor, while the TC621 connects to an external NTC ther...TC620HEPA
Mfg:MICROCHIP D/C:08+PBF Vendor:Other Category:Other
TC620HEOA713
Mfg:MICROCHIP D/C:08+PBF Vendor:Other Category:Other
TC620HEOA
Mfg:TOSHIBA Pack:SOP-8 D/C:0230+ Vendor:Other Category:Other
TC620HCPA
Mfg:TELCOM Pack:DIP8 D/C:00+ Vendor:Other Category:Other
TC620HCOA713
Mfg:MICROCHIP D/C:08+PBF Vendor:Other Category:Other
TC620HCOA
Mfg:7 Pack:MICROCHIP Vendor:Other Category:Other
TC620CVOA713
Mfg:MICROCHIP D/C:08+PBF Vendor:Other Category:Other
TC620CVOA
Vendor:Other Category:Other
The TC620CVOA belongs to TC620 and TC621 family which are programmable logic output temperature detectors designed for use in thermal management applications. The TC620CVOA features an on-board temperature sensor, while ...TC620CEPA
Mfg:TELCOM Pack:DIP Vendor:Other Category:Other
TC620CEOA713
Mfg:INTEGRATED Pack:9937 D/C:2500/TEEL Vendor:Other Category:Other
TC620CEOA
Mfg:TELCOM Vendor:Other Category:Other
TC620CCPA
Mfg:TOS Pack:96 D/C:DIP-8 Vendor:Other Category:Other
TC620CCOA713
Mfg:MICRochip Pack:SOP8 D/C:06+ Vendor:Other Category:Other
TC620CCOA
Mfg:Microchip Pack:SOP-8 D/C:03+ Vendor:Other Category:Other
TC620
Vendor:Other Category:Other
TC620 and TC621 are programmable logic output temperature detectors designed for use in thermal management applications. The TC620 features an on-board temperature sensor, while the TC621 connects to an external NTC ther...TC62
Vendor:Cornell Dubilier Electronics (CDE) Category:Capacitors
CAP ALUM 10UF 350V AXIALThe TC62 is an advanced version of the industry- standard 7662 high-voltage DC-to-DC converter. Using improved design techniques and CMOS construction, the TC962 can source as much as 8mA versus the 7662's 20mA capabilit...TC6162AU
Vendor:Other Category:Other
The TC6162AU is a CMOS LSI chip for generating NTSC television synchronization signals and operating a 4000,000 pixel FITCCD area image sensor. Features of the TC6162AU are:(1)generation of NTSC television synchronizati...TC6134AF
Vendor:Other Category:Other
The CMOS LSI of TC6134AF was developed to drive the TCD5340C,TCD5280D,TCD5120AC and TCD5130AC.TC6134AF can be combined with a vertical clock driver to constitute the CCD area image sensor driving circuit. Features of th...TC6102
Vendor:Other Category:Other
The TC6102 a two-port Switched Controller, is an ideal solution for dual speed Hub application. The chip supports a special backpressure with buffering feature (in half-duplex mode) for dual-speed Hub application. If the...TC5A
Vendor:Other Category:Other
TC59SMAFTL-80
Vendor:Other Category:Other
TC59SMAFTL-80 is a CMOS synchronous dynamic random access memory organized as 2,097,152-words × 4 banks × 16 bits and TC59SM708AFT/AFTL is organized as 4,194,304 words × 4 banks × 8 bits and TC59SM704AFT/AFTL is organize...TC59SMAFTL-75
Vendor:Other Category:Other
TC59SMAFTL-75 is a CMOS synchronous dynamic random access memory organized as 2,097,152-words × 4 banks × 16 bits and TC59SM708AFT/AFTL is organized as 4,194,304 words × 4 banks × 8 bits and TC59SM704AFT/AFTL is organize...TC59SMAFTL-70
Vendor:Other Category:Other
TC59SM716AFT/AFTL is a CMOS synchronous dynamic random access memory organized as 2,097,152-words × 4 banks × 16 bits and TC59SMAFTL-70 is organized as 4,194,304 words × 4 banks × 8 bits and TC59SM704AFT/AFTL is organize...TC59SM816BFTL
Vendor:Other Category:Other
TC59SM816BFTL is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits and TC59SM808BFT/BFTL is organized as 8,388,608 words × 4 banks × 8 bits and The TC59SM804BFT/BFTL is orga...TC59SM816BFT
Vendor:Other Category:Other
TC59SM816BFT/BFTL is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits and TC59SM808BFT/BFTL is organized as 8,388,608 words × 4 banks × 8 bits and The TC59SM804BFT/BFTL is ...TC59SM808BFTL
Vendor:Other Category:Other
TC59SM816BFT/BFTL is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits and TC59SM808BFTL is organized as 8,388,608 words × 4 banks × 8 bits and The TC59SM804BFT/BFTL is orga...TC59SM808BFT
Vendor:Other Category:Other
TC59SM816BFT/BFTL is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits and TC59SM808BFT/BFTL is organized as 8,388,608 words × 4 banks × 8 bits and The TC59SM804BFT/BFTL is ...TC59SM716AFTL
Vendor:Other Category:Other
TC59SM716AFTL is a CMOS synchronous dynamic random access memory organized as 2,097,152-words × 4 banks × 16 bits and TC59SM708AFT/AFTL is organized as 4,194,304 words × 4 banks × 8 bits and TC59SM704AFT/AFTL is organize...TC59SM716AFT
Vendor:Other Category:Other
TC59SM716AFT is a CMOS synchronous dynamic random access memory organized as 2,097,152-words × 4 banks × 16 bits and TC59SM708AFT/AFTL is organized as 4,194,304 words × 4 banks × 8 bits and TC59SM704AFT/AFTL is organized...TC59SM716
Vendor:Other Category:Other
TC59SM716 is a CMOS synchronous dynamic random access memory organized as 2,097,152-words × 4 banks × 16 bits and TC59SM708AFT/AFTL is organized as 4,194,304 words × 4 banks × 8 bits and TC59SM704AFT/AFTL is organized as...TC59SM708AFTL
Vendor:Other Category:Other
TC59SM716AFT/AFTL is a CMOS synchronous dynamic random access memory organized as 2,097,152-words × 4 banks × 16 bits and TC59SM708AFTL is organized as 4,194,304 words × 4 banks × 8 bits and TC59SM704AFT/AFTL is organize...TC59SM708AFT
Vendor:Other Category:Other
TC59SM716AFT/AFTL is a CMOS synchronous dynamic random access memory organized as 2,097,152-words × 4 banks × 16 bits and TC59SM708AFT/AFTL is organized as 4,194,304 words × 4 banks × 8 bits and TC59SM704AFT/AFTL is orga...TC59SM08
Vendor:Other Category:Other
TC59SM716AFT/AFTL is a CMOS synchronous dynamic random access memory organized as 2,097,152-words × 4 banks × 16 bits and TC59SM08 is organized as 4,194,304 words × 4 banks × 8 bits and TC59SM704AFT/AFTL is organized as ...TC59SM04AFT
Vendor:Other Category:Other
TC59SM04AFT is a CMOS synchronous dynamic random access memory organized as 2,097,152-words × 4 banks × 16 bits and TC59SM708AFT/AFTL is organized as 4,194,304 words × 4 banks × 8 bits and TC59SM04AFT is organized as 8,3...TC59S6404BFT-80
Vendor:Other Category:Other
The TC59S6404BFT-80 is a COMS synchronous ranamic access memory organized as 4194304 words * 4 banks * 4 bits.The TC59S6404BFT-80 is ideal for main memory in applications such as work-stations. Features of the TC59S6404...TC59LM914/06AMG-50
Vendor:Other Category:Other
Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM914/06AMG-50 is Fast Cycle Random Access Memory (Network FCRAMTM) containing 536,870,912 memory cells. TC59LM914AMG is organized as 4,194,304-wor...TC59LM914/06AMG-37
Vendor:Other Category:Other
Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM914/06AMG-37 is Fast Cycle Random Access Memory (Network FCRAMTM) containing 536,870,912 memory cells. TC59LM914/06AMG-37 is organized as 4,194,3...TC59LM913AMG-50
Vendor:Other Category:Other
Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM913AMG-50 is Network FCRAMTM containing 536,870,912 memory cells. TC59LM913AMG-50 is organized as 4,194,304-words × 8 banks × 16 bits. TC59LM913A...TC59LM913AMB-50
Vendor:Other Category:Other
Network FCRAMTM TC59LM913AMB-50 is Double Data Rate Fast Cycle Random Access Memory. TC59LM913AMB-50 is Network FCRAMTM containing 536,870,912 memory cells. TC59LM913AMB-50 is organized as 4,194,304-words × 8 banks × 16...TC59LM836DKG-30
Vendor:Other Category:Other
Network FCRAMTM TC59LM836DKG-30 is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DKG-30 is Network FCRAMTM containing 301,989,888 memory cells. TC59LM836DKG is organized as 2,097,152-words × 4 banks × 36 bit...TC59LM836DKB-40
Vendor:Other Category:Other
Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DKB-40 is Network FCRAMTM containing 301,989,888 memory cells. TC59LM836DKB is organized as 2,097,152-words × 4 banks × 36 bits. TC59LM836DKB-...TC59LM836DKB-33
Vendor:Other Category:Other
Network FCRAMTM TC59LM836DKB-33 is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DKB-33 is Network FCRAMTM containing 301,989,888 memory cells. TC59LM836DKB is organized as 2,097,152-words × 4 banks × 36 bi...TC59LM836DKB-30
Vendor:Other Category:Other
Network FCRAMTM TC59LM836DKB-30 is Double Data Rate Fast Cycle Random Access Memory. TC59LM836DKB-30 is Network FCRAMTM containing 301,989,888 memory cells. TC59LM836DKB is organized as 2,097,152-words × 4 banks × 36 bi...TC59LM818DMG-40
Vendor:Other Category:Other
Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMG-40 is Network FCRAMTM containing 301,989,888 memory cells. TC59LM818DMG is organized as 4,194,304-words × 4 banks × 18 bits. TC59LM818DMG ...TC59LM818DMG-33
Mfg:TOSHIBA Pack:2007 D/C:CBGA Vendor:Other Category:Other
Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMG-33 is Network FCRAMTM containing 301,989,888 memory cells. TC59LM818DMG-33 is organized as 4,194,304-words × 4 banks × 18 bits. TC59LM818D...TC59LM818DMB-40
Vendor:Other Category:Other
Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMB-40 is Network FCRAMTM containing 301,989,888 memory cells. TC59LM818DMG is organized as 4,194,304-words × 4 banks × 18 bits. TC59LM818DMB-...TC59LM818DMB-33
Mfg:TOS Pack:BGA PB D/C:06+ Vendor:Other Category:Other
Network FCRAMTM TC59LM818DMB-33 is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMB-33 is Network FCRAMTM containing 301,989,888 memory cells. TC59LM818DMG is organized as 4,194,304-words × 4 banks × 18 bit...TC59LM814CFT
Vendor:Other Category:Other
Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFT are Network FCRAMTM containing 268,435,456 memory cells. TC59LM814CFT is organized as 4,194,304-words × 4 banks s× 16 bits, TC59LM806CF...TC595002ECBTR
Mfg:MICROCHIP D/C:08+PBF Vendor:Microchip Technology Category:Integrated Circuits (ICs)
IC VOLT REG LDO NEG 5.0V SOT23A3TC594002ECBTR
Vendor:Other Category:Other
TC593002ECBTR
Mfg:MICROCHIP D/C:08+PBF Vendor:Microchip Technology Category:Integrated Circuits (ICs)
IC VOLT REG LDO NEG 3.0V SOT23A3TC59
Vendor:Cornell Dubilier Electronics (CDE) Category:Capacitors
CAP ALUM 50UF 250V AXIALThe TC59 is a low dropout, negative output voltage regulator designed specifically for battery-operated systems. Its full CMOS construction eliminates the wasted ground current typical of bipolar LDOs. This reduced suppl...TC58V64DC
Vendor:Other Category:Other
Features of the TC58V64DC are:(1)organization memory cell array is 258*16k*8,register is 528*8,page size is 528 bytes,block size is (8k+256) bytes;(2)mode read,reset,auto page program,auto block erase,status read;(3)mode...TC58V64BDC
Vendor:Toshiba Category:Memory Cards, Modules
IC 64MBIT NAND FLASH 3V 44-TSOPThe TC58V64BDC is a single 3.3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 16 pages × 1024 blocks. The TC58V64BDC has a 528-byte static r...TC58V64ADC
Vendor:Other Category:Other
The TC58V64ADC is single 3.3V 64M bit NAND electrically erasable and programmable read only memory orgranized as 528 bytes*16 pages*1024 blocks. The feature of TC58V64ADC are as follows: (1)meomory cell array: 528*16 k*8...TC58V32AFT
Vendor:Toshiba Category:Integrated Circuits (ICs)
IC 32MBIT NAND FLASH 3V 44-TSOPThe TC58V32AFT is single volt 32M bit NAND electrically erasable and programmable read only memory orgranized as 528 bytes*16 pages*512 blocks. The feature of TC58V32AFT are as follows: ((1)meomory cell array: 528*8 k*8;...TC58NVG1SxB
Vendor:Other Category:Other
The TC58NVG1SxB is a single 3.3 V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes/(1024 + 32) words × 64 pages × 2048 blocks. The devi...TC58NVG0S3AFT05
Mfg:TOSHIBA Pack:TSOP D/C:0506+ Vendor:Other Category:Other
The TC58NVG0S3AFT05 is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND EEPROM) organized as (2048 + 64) bytes × 64 pages × 1024 blocks. The TC58NVG0S3AFT05 ha...TC58NVG0S3A
Vendor:Other Category:Other
The TC58NVG0S3A is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 1024 blocks. The TC58NVG0S3A has a 2112-b...TC58NS256DC
Vendor:Other Category:Other
The TC58NS256DC is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks. The TC58NS256DC has a 528-byte stat...TC58NS128DC
Vendor:Other Category:Other
The TC58NS128DC is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The TC58NS128DC has a 528-byte stat...TC58FVT641XB-70
Vendor:Other Category:Other
The TC58FVT641XB-70 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVT641XB-70 features commands fo...TC58FVT641XB-10
Vendor:Other Category:Other
The TC58FVT641XB-10 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVT641XB-10 features commands fo...TC58FVT641FT-70
Mfg:TOSHIBA Pack:TSOP D/C:0140+ Vendor:Other Category:Other
The TC58FVT641FT-70 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVT641FT-70 features commands fo...TC58FVT641FT-10
Mfg:10800 Pack:TOS Vendor:Other Category:Other
The TC58FVT641FT-10 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVT641FT-10 features commands fo...TC58FVT321
Vendor:Other Category:Other
The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4,194,304 words × 8 bits or as 2,097,152 words × 16 bits. The TC58FVT321/B321 features commands fo...TC58FVT160
Vendor:Other Category:Other
The TC58FVT160/B160A is a 16,777,216-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 2,097,152 words × 8 bits or as 1,048,576 words × 16 bits. The TC58FVT160/B160A features commands ...TC58FVM7T2A
Vendor:Other Category:Other
The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features commands for Re...TC58FVM7B2A
Vendor:Other Category:Other
The TC58FVM7B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7B2A features commands for Read, Prog...TC58FVM6T2A
Vendor:Other Category:Other
The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 words × 8 bits or as 4194304 words × 16 bits. The TC58FVM6T2A/B2A features commands for Read...TC58FVM6B2ATG65
Vendor:Other Category:Other
The TC58FVM6B2ATG65 is designed as one kind of 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory device that features a Simultaneous Read/Write operation so that data can be read during a ...TC58FVM6B2A
Vendor:Other Category:Other
The TC58FVM6B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 words × 8 bits or as 4194304 words × 16 bits. The TC58FVM6B2A features commands for Read, Progra...TC58FVM5T3AFT65
Vendor:Other Category:Other
TC58FVB641XB-70
Mfg:LG Pack:SOP D/C:16 Vendor:Other Category:Other
The TC58FVB641XB-70 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVB641XB-70 features commands fo...TC58FVB641XB-10
Vendor:Other Category:Other
The TC58FVB641XB-10 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVB641XB-10 features commands fo...TC58FVB641FT-70
Mfg:10800 Pack:TOSH Vendor:Other Category:Other
The TC58FVB641FT-70 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVB641FT-70 features commands fo...TC58FVB641FT-10
Mfg:TOSHIBA Pack:TSOP Vendor:Other Category:Other
The TC58FVB641FT-10 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVB641FT-10 features commands fo...TC58DVM92A1FTI0
Mfg:10800 Pack:TOSHIBA Vendor:Other Category:Other
The TC58DVM92A1FTI0 is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 4096 blocks. The device has a 528-byte stat...TC58DVM92A1FT00
Mfg:7300 Pack:TOS D/C:05+ Vendor:Other Category:Other
The TC58DVM92A1FT00 is a single 3.3 V 1-Gbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes 32 pages 4096 blocks. The TC58DVM92A1...TC58DVM72F1FT00
Vendor:Other Category:Other
The TC58DVM72F1FT00 is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes/264 words u 32 pages u 1024 blocks. The device uses dual power suppl...TC58DVM72A1FT00
Mfg:6000 Pack:TOSHIBA Vendor:Other Category:Other
The TC58DVM72A1FT00 is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes/264 words u 32 pages u 1024 blocks. The device uses dual power suppl...TC58DVG02A1FT00
Vendor:Other Category:Other
The TC58DVG02A1FT00 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 8192 blocks. The TC58DVG02A1FT00 has a 528-...TC58DAM72F1FT00
Vendor:Other Category:Other
The TC58DAM72F1FT00 is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes/264 words u 32 pages u 1024 blocks. The device uses dual power suppl...TC58DAM72A1FT0
Vendor:Other Category:Other
The TC58DAM72A1FT0 is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes/264 words u 32 pages u 1024 blocks. The TC58DAM72A1FT0 uses dual powe...TC58B321FT
Vendor:Other Category:Other
The TC58B321FT is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4,194,304 words × 8 bits or as 2,097,152 words × 16 bits. The TC58B321FT features commands for Read, Pr...TC58B160AFT
Vendor:Other Category:Other
The TC58B160AFT is a 16,777,216-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 2,097,152 words × 8 bits or as 1,048,576 words × 16 bits. The TC58B160AFT features commands for Read, ...TC58512FT
Mfg:TOSHIBA Pack:TSOP Vendor:Other Category:Other
The TC58512FT is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes 32 pages 4096 blocks. The TC58512FT has a 528-byte static r...TC58256FTI
Vendor:Other Category:Other
The TC58256FTI is a single 3.3V 256Mbit (276,648,128) bit NAND Electrically Erasable.It has the following features.It is programmable Read-Only Memory organized as 528 bytes*32 pages*2048 blocks.The TC58256FTI has...TC58256FT
Vendor:Other Category:Other
The TC58256FT is single 3.3-V, 256-Mbit NAND electrically erassble and programmable read-only memory organized as 528 bytes * 32pages * 2048 blocks.The feature of TC58256FT are as follows: (1)memory cell array: 528*64K*8...TC58256AFT
Mfg:TOSHIBA Pack:TSOP Vendor:Other Category:Other
The TC58256AFT is a single 3.3 V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks. The TC58256AFT has a 528-byte static...TC5816BFT
Vendor:Other Category:Other
The TC5816BFT is single 5.0-volt 16Mbit NAND electrically erasable and programmable read only memory with spare 64K*8bits. The device is organized as 264 byte*16 pages*512 blocks. The feature of TC5816BFT are as follows:...TC58128AFTI
Mfg:10800 Pack:TOSH Vendor:Other Category:Other
The TC58128AFTI is a single 3.3 V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The TC58128AFTI has a 528-byte stat...TC58128A
Vendor:Other Category:Other
The TC58128A is a single 3.3 V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The TC58128A has a 528-byte static reg...TC581282AXB
Vendor:Other Category:Other
The TC581282AXB is a single 3.3 V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The TC581282AXB has a 528-byte stat...