TC58V32AFT

The TC58V32AFT is single volt 32M bit NAND electrically erasable and programmable read only memory orgranized as 528 bytes*16 pages*512 blocks. The feature of TC58V32AFT are as follows: ((1)meomory cell array: 528*8 k*8; (2)register: 528*8; (3)mode: read, reset, auto page program, auto block erase, status read; (4)mode control: serial input/output, command control; (5)power supply: VCC = 3.0V to 5.5V; (6)access time: cell array-register 10s max, serial read cycle 50ns min; (7)operating current: read 10mA typical, program 10mA typical, erase: 10mA typical, standby 100A.

The absolute maximum ratings of the TC58V32AFT are: (1)power supply voltage: -0.6 to 6.0V; (2)input voltage: -0.6 to 6.0V; (3)input/output voltage:  -0.6V to VCC + 0.3V; (4)power dissipation: 0.5W; (5)soldering temperature: 260; (6)operating temperature: 0 to 70.

The following is about the electrical characteristics of TC58V32AFT: (1)input leak current: ± 10 A at VIN = 0V to VCC; (2)output leak current: ± 10 A at VIN = 0.4V to VCC; (3)operating current(serial read): 10mA typical and 20mA max at CE = VIL, IOUT = 0mA, tcycle = 50ns; (4)operating current(command input): 10mA typical and 20mA max at tcycle = 50ns; (5)operating current(data input): 10mA typical and 20mA max at tcycle = 50ns; (6)operating current(address input): 10mA typical and 20mA max at tcycle = 50ns; (7)program current: 10mA typical and 20mA max; (8)erasing current: 10mA typical and 20mA max; (9)standby current: 1mA max at CE = VIH; (10)standby current: 100A max at CE = VCC - 0.2V; (11)high level output voltage: 2.4V min at IOH = -400A; (12)low level output voltage: 0.4V max at IOL = 2.1mA.