TC581282AXB

• Organization
    Memory cell allay 528 * 32K * 8
    Register 528 * 8
    Page size 528 bytes
    Block size (16K + 512) bytes
• Modes
    Read, Reset, Auto Page Program
    Auto Block Erase, Status Read
• Mode control
    Serial input/output
    Command control
• Power supply V_CC = 2.7 V to 3.6 V
• Program/Erase Cycles 1E5 cycle (with ECC)
• Access time
    Cell array to register 25 s max
    Serial Read Cycle 50 ns min
• Operating current
     Read (50 ns cycle) 10 mA typ.
    Program (avg.) 10 mA typ.
    Erase (avg.) 10 mA typ.
    Standby 100 A
• Package
     P-TFBGA56-0710-0.80AZ (Weight: g typ.)

The TC581282AXB is a single 3.3 V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E²PROM) organized as 528 bytes × 32 pages × 1024 blocks. The TC581282AXB has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes × 32 pages).

The TC581282AXB is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the TC581282AXB most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.