TC58256AFT

` Organization
Memory cell allay 528 *64K * 8
Register 528 * 8
Page size 528 bytes
Block size (16K + 512) bytes
` Modes
Read, Reset, Auto Page Program
Auto Block Erase, Status Read
` Mode control
Serial input/output
Command control
` Power supply V_CC =2.7 V to 3.6 V
` Program/Erase Cycles 1E5 cycle (with ECC)
` Access time
Cell array to register 25 s max
Serial Read Cycle 50 ns min
` Operating current
Read (50 ns cycle) 10 mA typ.
Program (avg.) 10 mA typ.
Erase (avg.) 10 mA typ.
Standby 100 A
` Package
TSOPI48-P-1220-0.50 (Weight: 0.53 g typ.)

The TC58256AFT is a single 3.3 V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks. The TC58256AFT has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes × 512 bytes: 528 bytes × 32 pages).

The TC58256AFT is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the TC58256AFT most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.