Features: • Power supply voltage VDD = 2.7 V~3.6 V• Operating temperature Ta = −40°C~85°C• Organization 4M * 8 bits / 2M * 16 bits• FunctionsSimultaneous Read/Write Auto Program, Auto Erase Fast Program Mode / Acceleration Mode Program Suspend/Resume Erase Suspend/Res...
TC58FVT321: Features: • Power supply voltage VDD = 2.7 V~3.6 V• Operating temperature Ta = −40°C~85°C• Organization 4M * 8 bits / 2M * 16 bits• FunctionsSimultaneous Read/Write Aut...
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Features: • Organization Memory cell allay 528 * 32K * 8 Register 528 * 8 Page size 528 byte...
• Power supply voltage VDD = 2.7 V~3.6 V
• Operating temperature Ta = −40°C~85°C
• Organization 4M * 8 bits / 2M * 16 bits
• Functions
Simultaneous Read/Write Auto Program, Auto Erase Fast Program Mode / Acceleration Mode Program Suspend/Resume Erase Suspend/Resume data polling / Toggle bit block protection, boot block protection Automatic Sleep, support for hidden ROM area common flash memory interface (CFI) Byte/Word Modes
• Block erase architecture 8 * 8 Kbytes / 63 * 64 Kbytes
• Boot block architecture
TC58FVT321FT/XB: top boot block
TC58FVB321FT/XB: bottom boot block
• Mode control Compatible with JEDEC standard commands
• Erase/Program cycles 105 cycles typ.
• Access time
70 ns (CL: 30 pF)
100 ns (CL: 100 pF)
• Power consumption
10 A (Standby)
30 mA (Read operation)
15 mA (Program/Erase operations)
• Package
TC58FVT321/B321FT:
TSOPI48-P-1220-0.50 (weight: 0.51 g)
TC58FVT321/B321XB:
P-TFBGA56-0710-0.80AZ (weight: 0.125 g)
SYMBOL |
PARAMETER |
RANGE |
UNIT |
VDD |
VDD Supply Voltage |
−0.6~4.6 |
V |
VIN |
Input Voltage |
−0.6~VDD + 0.5 ( 4.6) |
V |
VDQ |
Input/Output Voltage |
−0.6~VDD + 0.5 ( 4.6) |
V |
VIDH |
Maximum Input Voltage for A9, OE and RESET |
13.0 |
V |
VACCH |
Maximum Input Voltage for WP/ACC |
10.5 |
V |
PD |
Power Dissipation |
126 |
mW |
TSOLDER |
Soldering Temperature (10 s) |
260 |
°C |
TSTG |
Storage Temperature |
−55~150 |
°C |
TOPR |
Operating Temperature |
−40~85 |
°C |
IOSHORT |
Output Short-Circuit Current(1) |
100 |
mA |
The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4,194,304 words × 8 bits or as 2,097,152 words × 16 bits. The TC58FVT321/B321 features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVT321/B321 also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.