TC58128AFTI

IC FLASH 128MBIT 50NS 48TSOP

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SeekIC No. : 003557787 Detail

TC58128AFTI: IC FLASH 128MBIT 50NS 48TSOP

floor Price/Ceiling Price

Part Number:
TC58128AFTI
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/4

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
Format - Memory: FLASH Memory Type: FLASH - NAND
Available Set Gain : 5.9 dB Memory Size: 128M (16M x 8)
Speed: 50ns Interface: Serial
Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C
Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I    

Description

Series: -
Operating Temperature: -40°C ~ 85°C
Format - Memory: FLASH
Voltage - Supply: 2.7 V ~ 3.6 V
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Speed: 50ns
Supplier Device Package: 48-TSOP I
Memory Type: FLASH - NAND
Memory Size: 128M (16M x 8)
Manufacturer: Toshiba
Interface: Serial


Features:

• Organization
   Memory cell allay 528 * 32K * 8 Register 528 * 8 Page size 528 bytes Block size (16K + 512) bytes
• Modes
   Read, Reset, Auto Page Program Auto Block Erase, Status Read
• Mode control
   Serial input/output Command contro
• Power supply VCC = 2.7 V to 3.6 V
• Program/Erase Cycles 1E5 cycle (with ECC)
• Access time
  Cell array to register 25 s max  Serial Read Cycle 50 ns min
• Operating current
   Read (50 ns cycle) 10 mA typ.  Program (avg.) 10 mA typ. Erase (avg.) 10 mA typ. Standby 100 A
• Package
   TSOPI48-P-1220-0.50 (Weight: 0.53 g typ.)




Pinout

  Connection Diagram


Specifications

SYMBOL
RATING
VALUE
UNIT
VCC
Power Supply Voltage
−0.6 to 4.6
v
VIN
Input Voltage
−0.6 to 4.6
v
V I/O
Input/Output Voltage
−0.6 V to VCC + 0.3 V ( 4.6 V)
V
PD
Power Dissipation
0.3
W
Tsolder
Soldering Temperature (10s)
260
°C
Tstg
Storage Temperature
−55 to 150
°C
Topr
Operating Temperature
−40 to 85
°C



Description

The TC58128AFTI is a single 3.3 V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The TC58128AFTI has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes × 32 pages).

The TC58128AFTI is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the TC58128AFTI most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.




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