Position: Home  > All Categories> Integrated Circuits (ICs) > TC58NVG0S3A

TC58NVG0S3A

Features: ·Organization Memory cell allay 2112 􀁵 64K 􀁵 8 Register 2112 􀁵 8 Page size 2112bytes Block size (128K 􀀎 4K) bytes·Modes Read􃧘Reset􃧘Auto Page Program Auto Block Erase􃧘Status Read·Mode control Serial input􃧛output Comma...

product image

TC58NVG0S3A Picture
See larger image
SeekIC No. : 004514208 Detail

TC58NVG0S3A: Features: ·Organization Memory cell allay 2112 􀁵 64K 􀁵 8 Register 2112 􀁵 8 Page size 2112bytes Block size (128K 􀀎 4K) bytes·Modes Read􃧘Reset􃧘Aut...

TC58NVG0S3A Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
TC58NVG0S3A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/1/12

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Organization
   Memory cell allay 2112 􀁵 64K 􀁵 8
   Register 2112 􀁵 8
   Page size 2112bytes
   Block size (128K 􀀎 4K) bytes
·Modes
   Read􃧘Reset􃧘Auto Page Program
   Auto Block Erase􃧘Status Read
·Mode control
   Serial input􃧛output
   Command control
·Powersupply VCC 􀀠 2.7 V to 3.6 V
·Program/Erase Cycles 1E5 Cycles(With ECC)
·Access time
   Cell array to register 25 􀁐s􀀃max
   Serial Read Cycle 50 ns min
·Operating current
   Read (50 ns cycle) 10 mA typ.
   Program (avg.) 10 mA typ.
   Erase (avg.) 10 mA typ.
   Standby 50 􀁐A max
·Package
   TSOP I 48-P-1220-0.50 (Weight : 0.53 g typ.)



Pinout

Connection Diagram


Specifications

SYMBOL
 RATING
VALUE
 UNIT
VCC
 Power Supply Voltage
􀀐0.6 to 4.6
 V
VIN
 Input Voltage
􀀐0.6 to 4.6
 V
V I/O
 Input /Output Voltage
􀀐0.6 V to VCC 􀀎 0.3 V ( 4.6 V)
 V
PD
 Power Dissipation
0.3
 W
TSOLDER
 Soldering Temperature (10s)
260
 °C
TSTG
 Storage Temperature
-55 to 150
 °C
TOPR
 Operating Temperature
0 to 70
 °C



Description

The TC58NVG0S3A is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 1024 blocks. The TC58NVG0S3A has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation of TC58NVG0S3A is implemented in a single block unit (128 Kbytes + 4Kbytes: 2112 bytes x 64 pages).

The TC58NVG0S3A is a serial-type memory device which utilizes the I/O pins for both address and data input / output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density nonvolatile memory data storage.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Undefined Category
VI-B63-IU
X27 589
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
LED Products
LM24P20
KCG057QV1DB-G770
View more