TC58V64BDC

 Organization Memory cell array 528 * 16K * 8 Register 528 * 8 Page size 528 bytes Block size (8K + 256) bytes
 Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read
 Mode control Serial input/output, Command control
 Complies with the SmartMedia^TM Electrical Specification and Data Format Specification issued by the SSFDC Forum
 Power supply V_CC = 3.3 V  0.3 V
 Program/Erase Cycles 1E5 cycle (with ECC)
 Access time Cell array-register 25 s max Serial Read cycle 50 ns min
 Operating current Read (50-ns cycle) 10 mA typ. Program (avg.) 10 mA typ. Erase (avg.) 10 mA typ. Standby 100 A max
Package FDC-22A (Weight: 1.8 g typ.)

The TC58V64BDC is a single 3.3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E²PROM) organized as 528 bytes × 16 pages × 1024 blocks. The TC58V64BDC has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (8 Kbytes + 256 bytes: 528 bytes × 16 pages).

The TC58V64BDC is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the TC58V64BDC most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

The data stored in the TC58V64BDC needs to comply with the data format standardized by the SSFDC Forum in order to maintain compatibility with other SmartMedia^TM systems.