Features: • Power supply voltage VDD = 2.3 V~3.6 V• Operating temperature Ta = −40°C~85°C• Organization 16M × 8 bits/8M × 16 bits• Functions• Simultaneous Read/Write Page Read Auto Program, Auto Page Program Auto Block Erase, Auto Chip Erase Fast Program Mode / ...
TC58FVM7B2A: Features: • Power supply voltage VDD = 2.3 V~3.6 V• Operating temperature Ta = −40°C~85°C• Organization 16M × 8 bits/8M × 16 bits• Functions• Simultaneous Read/Wr...
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Features: • Organization Memory cell allay 528 * 32K * 8 Register 528 * 8 Page size 528 byte...
SYMBOL |
PARAMETER |
RANGE |
UNIT |
VDD |
VDD Supply Voltage |
−0.6~4.6 |
V |
VIN | Input Voltage |
−0.6~VDD + 0.5 ( 4.6) |
V |
VDQ | Input/Output Voltage |
−0.6~VDD + 0.5 ( 4.6) |
V |
VIDH |
Maximum Input Voltage for A9, OE and RESET |
13.0 |
V |
VACCH | Maximum Input Voltage for WP/ACC |
10.5 |
V |
PD | Power Dissipation |
126 |
mW |
Tsolder |
Soldering Temperature (10s) |
260 |
°C |
Tstg | Storage Temperature |
−55~150 |
°C |
Topr |
Operating Temperature |
−40~85 |
°C |
IOSHORT | Output Short-Circuit Current(1) |
100 |
mA |
The TC58FVM7B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7B2A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVM7B2A also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.