TC58DVM72F1FT00

Features: Organization TC58DxM72A1xxxx TC58DxM72F1xxxx Memory cellallay528 u 32K u 8 264 x 32k x 16 Register528 u 8 264 x 16Page size 528 bytes 264 wordsBlock size (16K  512) bytes (8k + 256) wordsModes Read, Reset, Auto Page Program Auto Block Erase, Status ReadMode control Serial input/outp...

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SeekIC No. : 004514187 Detail

TC58DVM72F1FT00: Features: Organization TC58DxM72A1xxxx TC58DxM72F1xxxx Memory cellallay528 u 32K u 8 264 x 32k x 16 Register528 u 8 264 x 16Page size 528 bytes 264 wordsBlock size (16K  512) bytes (8k + 256) wor...

floor Price/Ceiling Price

Part Number:
TC58DVM72F1FT00
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Description



Features:

Organization            TC58DxM72A1xxxx      TC58DxM72F1xxxx 
   Memory cell allay      528 u 32K u 8             264 x 32k x 16 
   Register                   528 u 8                       264 x 16 
   Page size                 528 bytes                   264 words 
   Block size                 (16K  512) bytes      (8k + 256) words 
Modes
   Read, Reset, Auto Page Program
   Auto Block Erase, Status Read 
Mode control
  Serial input/output
  Command control 
Power supply    TC58DVM72x1xxxx TC58DAM72x1xxxx 
    Vcc:               2.7V to 3.6V             2.7V to 3.6V
    Vccq:             2.7V to 3.6V             1.65V to 1.95V 
Program/Erase Cycles    1E5 cycle (with ECC) 
Access time
   Cell array to register                     25   s  max
   Serial Read Cycle                             50  ns  min 
Operating current 
   Read (50 ns cycle)                            10 mA typ.
   Program (avg.)                                 10 mA typ.
Erase (avg.)  10 mA typ.
   Standby 50 PA max. 
Package
      TSOP I 48-P-1220-0.50 (Weight:0.53g typ)



Pinout

  Connection Diagram


Specifications

SYMBOL RATING VALUE unit
TC58DVxxxxx TC58DAxxxx
VCC Power Supply Voltage -0.6~4.6 -0.6~4.6 V
VCCQ I/O port Power Supply Voltage -0.6~4.6 -0.6~2.6 V
VIN Input Voltage for Control pins -0.6~4.6 -0.6~2.6 V
VI/O Input/Output Voltage for I/O pins -0.6 V~VCCQ  0.3 V ( 4.6 V) -0.6 V~VCCQ  0.3 V ( 2.6 V) W
PD Power Dissipation 0.3 0.3  
Tsolder Soldering Temperature(10s) 260 260 °C
Tstg Storage Temperature -55~150 55~150 °C
Topr Operating Temperature 0~70 0~70 °C



Description

The TC58DVM72F1FT00 is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable  Read-Only Memory (NAND E2PROM) organized as 528 bytes/264 words u 32 pages u 1024 blocks. The device uses  dual power supplies (2.7 V to 3.6 V for VCC and 1.65 V to 1.95 V for VCCQ ). The TC58DVM72F1FT00 has a 528-byte/264-words static register which allows program and read data to be transferred between the register and the memory cell array  in 528-byte/256-words increments. The Erase operation of TC58DVM72F1FT00 is implemented in a single block unit (16 Kbytes  512 bytes:  528 bytes u 32 pages/8k words + 256 words:264 words x 32 pages).  

The TC58DVM72F1FT00 is a serial-type memory device which utilizes the I/O pins for both address and data  input/output as well as for command inputs. The Erase and Program operations are automatically executed making  the TC58DVM72F1FT00 most suitable for applications such as solid-state file storage, voice recording, image file memory for still  cameras and other systems which require high-density non-volatile memory data storage.




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