Features: •Power supply voltage VDD = 2.3 V~3.6 V•Operating temperature Ta = −40~85•Organization 4M * 8 bits/2M * 16 bits•Functions Simultaneous Read/Write Page Read Auto Program, Auto Page Program Auto Block Erase, Auto Chip Erase Fast Program Mode/Acceleration Mode ...
TC58FVM5T3AFT65: Features: •Power supply voltage VDD = 2.3 V~3.6 V•Operating temperature Ta = −40~85•Organization 4M * 8 bits/2M * 16 bits•Functions Simultaneous Read/Write Page Read Au...
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Features: • Organization Memory cell allay 528 * 32K * 8 Register 528 * 8 Page size 528 byte...
•Power supply voltage VDD = 2.3 V~3.6 V
•Operating temperature Ta = −40~85
•Organization 4M * 8 bits/2M * 16 bits
•Functions Simultaneous Read/Write Page Read Auto Program, Auto Page Program Auto Block Erase, Auto Chip Erase Fast Program Mode/Acceleration Mode Program Suspend/Resume Erase Suspend/Resume data polling/Toggle bit block protection, boot block protection Automatic Sleep, support for hidden ROM area common flash memory interface (CFI) Byte/Word Modes
•Block erase architecture
8*8 Kbytes/63*64 Kbytes
•Boot block architecture TC58FVM5T2A/3A: top boot block TC58FVM5B2A/3A: bottom boot block
SYMBOL | PARAMETER | RANGE | UNIT |
VDD | VDD Supply Voltage | −0.6~4.6 | V |
VIN | Input Voltage | −0.6~VDD + 0.5 ( 4.6)(1) | V |
VDQ | Input/Output Voltage | −0.6~VDD + 0.5 ( 4.6)(1) | V |
VIDH | Maximum Input Voltage for A9, OE and RESET (2) | 13.0 | V |
VACCH | Maximum Input Voltage for WP/ACC (2) | 10.5 | V |
PD | Power Dissipation | 600 | mW |
Tsolder | Soldering Temperature (10s) | 260 | |
Tstg | Storage Temperature | −55~150 | |
Topr | Operating Temperature | −40~85 | |
IOSHORT | Output Short-Circuit Current(3) | 100 | mA |