Features: Organization TC58DxM72A1xxxx TC58DxM72F1xxxx Memory cellallay528 u 32K u 8 264 x 32k x 16 Register528 u 8 264 x 16Page size 528 bytes 264 wordsBlock size (16K 512) bytes (8k + 256) wordsModes Read, Reset, Auto Page Program Auto Block Erase, Status ReadMode control Serial input/outp...
TC58DVM72A1FT00: Features: Organization TC58DxM72A1xxxx TC58DxM72F1xxxx Memory cellallay528 u 32K u 8 264 x 32k x 16 Register528 u 8 264 x 16Page size 528 bytes 264 wordsBlock size (16K 512) bytes (8k + 256) wor...
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Features: • Organization Memory cell allay 528 * 32K * 8 Register 528 * 8 Page size 528 byte...
SYMBOL | RATING | VALUE | unit | |
TC58DVxxxxx | TC58DAxxxx | |||
VCC | Power Supply Voltage | -0.6~4.6 | -0.6~4.6 | V |
VCCQ | I/O port Power Supply Voltage | -0.6~4.6 | -0.6~2.6 | V |
VIN | Input Voltage for Control pins | -0.6~4.6 | -0.6~2.6 | V |
VI/O | Input/Output Voltage for I/O pins | -0.6 V~VCCQ 0.3 V ( 4.6 V) | -0.6 V~VCCQ 0.3 V ( 2.6 V) | W |
PD | Power Dissipation | 0.3 | 0.3 | |
Tsolder | Soldering Temperature(10s) | 260 | 260 | °C |
Tstg | Storage Temperature | -55~150 | 55~150 | °C |
Topr | Operating Temperature | 0~70 | 0~70 | °C |
The TC58DVM72A1FT00 is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes/264 words u 32 pages u 1024 blocks. The device uses dual power supplies (2.7 V to 3.6 V for VCC and 1.65 V to 1.95 V for VCCQ ). The TC58DVM72A1FT00 has a 528-byte/264-words static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte/256-words increments. The Erase operation of TC58DVM72A1FT00 is implemented in a single block unit (16 Kbytes 512 bytes: 528 bytes u 32 pages/8k words + 256 words:264 words x 32 pages).
The TC58DVM72A1FT00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the TC58DVM72A1FT00 most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.