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TC58NVG0S3AFT05

Features: • Organization Memory cell array 2112 × 64K × 8 Register 2112 × 8Page size 2112 bytes Block size (128K + 4K) bytes• Modes Read, Reset, Auto Page Program Auto Block Erase, Status Read• Mode control Serial input/output Command control• Powersupply VCC = 2.7 V to 3.6...

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SeekIC No. : 004514209 Detail

TC58NVG0S3AFT05: Features: • Organization Memory cell array 2112 × 64K × 8 Register 2112 × 8Page size 2112 bytes Block size (128K + 4K) bytes• Modes Read, Reset, Auto Page Program Auto Block Erase, Statu...

TC58NVG0S3AFT05 Data Sheet

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Part Number:
TC58NVG0S3AFT05
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Organization
       Memory cell array 2112 × 64K × 8
       Register 2112 × 8
       Page size 2112 bytes
       Block size (128K + 4K) bytes
• Modes
       Read, Reset, Auto Page Program
       Auto Block Erase, Status Read
• Mode control
       Serial input/output
       Command control
• Powersupply VCC = 2.7 V to 3.6 V
• Program/Erase Cycles 1E5 Cycles (With ECC)
• Access time
       Cell array to register 25 µs max
       Serial Read Cycle 50 ns min
• Operating current
       Read (50 ns cycle) 10 mA typ.
       Program (avg.) 10 mA typ.
       Erase (avg.) 10 mA typ.
       Standby 50 µA max
• Package
       TSOPI48-P-1220-0.50 (Weight: 0.53 g typ.)


Pinout

Connection Diagram


Specifications

SYMBOL RATING VALUE UNIT
VCC Power Supply Voltage −0.6 to 4.6 V
VIN Input Voltage −0.6 to 4.6 V
VI/O Input /Output Voltage −0.6 V to VCC + 0.3 V ( 4.6 V) V
PD Power Dissipation 0.3 W
TSOLDER Soldering Temperature (10 s) 260 °C
TSTG Storage Temperature −55 to 150 °C
TOPR Operating Temperature 0 to 70 °C



Description

The TC58NVG0S3AFT05 is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND EEPROM) organized as (2048 + 64) bytes × 64 pages × 1024 blocks. The TC58NVG0S3AFT05 has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).

The TC58NVG0S3AFT05 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the TC58NVG0S3AFT05 most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.




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