Features: • Power supply voltage VDD = 2.7 V~3.6 V• Operating temperature Ta = −40°C~85°C• Organization 8M * 8 bits / 4M * 16 bits• Functions Simultaneous Read/Write Auto Program, Auto Erase Fast Program Mode / Acceleration Mode Program Suspend/Resume Erase Suspend/Re...
TC58FVT641XB-70: Features: • Power supply voltage VDD = 2.7 V~3.6 V• Operating temperature Ta = −40°C~85°C• Organization 8M * 8 bits / 4M * 16 bits• Functions Simultaneous Read/Write Au...
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Features: • Organization Memory cell allay 528 * 32K * 8 Register 528 * 8 Page size 528 byte...
SYMBOL | PARAMETER |
RANGE |
UNIT |
VDD | VDD Supply Voltage |
−0.6~4.6 |
V |
VIN | Input Voltage |
−0.6~VDD + 0.5 ( 4.6) |
V |
VDQ | Input/Output Voltage |
−0.6~VDD + 0.5 ( 4.6) |
V |
VIDH | Maximum Input Voltage for A9, OE and RESET |
13.0 |
V |
VACCH | Maximum Input Voltage for WP/ACC |
10.5 |
V |
PD | Power Dissipation |
126 |
mW |
Tsolder | Soldering Temperature (10s) |
260 |
°C |
Tstg | Storage Temperature |
−55~150 |
°C |
Topr | Operating Temperature |
−40~85 |
°C |
IOSHORT | Output Short-Circuit Current |
100 |
mA |
The TC58FVT641XB-70 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVT641XB-70 features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVT641XB-70 also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.