Features: OrganizationMemory cell allay 528 u 256K u 8 Register 528 u 8 Page size 528 bytes Block size (16K 512) bytes ModesRead, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Block Program, Multi Block Erase Mode control Serial input/output Command control Power supply VCC 2.7...
TC58DVG02A1FT00: Features: OrganizationMemory cell allay 528 u 256K u 8 Register 528 u 8 Page size 528 bytes Block size (16K 512) bytes ModesRead, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Blo...
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Features: • Organization Memory cell allay 528 * 32K * 8 Register 528 * 8 Page size 528 byte...
SYMBOL | RATING | VALUE | Unit |
VCC | Power Supply Voltage | -0.6 to 4.6 | V |
VIN | Input Voltage | -0.6 to 4.6 | V |
VI/O | Input/Output Voltage | -0.6 V to VCC 0.3 V (d 4.6 V) | V |
PD | Power Dissipation | 0.3 | W |
Tsolder | Soldering Temperature (10s) | 260 | °C |
Tstg | Storage Temperature | -55 to 150 | °C |
Topr | Operating Temperature | 0 to 70 | °C |
The TC58DVG02A1FT00 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 8192 blocks. The TC58DVG02A1FT00 has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation of TC58DVG02A1FT00 is implemented in a single block unit (16 Kbytes 512 bytes: 528 bytes u 32 pages).
The TC58DVG02A1FT00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the TC58DVG02A1FT00 most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.