TC58DVG02A1FT00

Features: OrganizationMemory cell allay 528 u 256K u 8 Register 528 u 8 Page size 528 bytes Block size (16K  512) bytes ModesRead, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Block Program, Multi Block Erase Mode control Serial input/output Command control Power supply VCC 2.7...

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SeekIC No. : 004514185 Detail

TC58DVG02A1FT00: Features: OrganizationMemory cell allay 528 u 256K u 8 Register 528 u 8 Page size 528 bytes Block size (16K  512) bytes ModesRead, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Blo...

floor Price/Ceiling Price

Part Number:
TC58DVG02A1FT00
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Description



Features:

  Organization
Memory cell allay     528 u 256K u 8
Register                   528 u 8
Page size                528 bytes
Block size               (16K  512) bytes 
  Modes
Read, Reset, Auto Page Program,
Auto Block Erase, Status Read,  
Multi Block Program, Multi Block Erase 
  Mode control
Serial input/output
Command control 
   Power supply                     VCC   2.7 V to 3.6 V 
   Program/Erase Cycles        1E5 cycle (with ECC) 
   Access time
Cell array to register          25 Ps max
Serial Read Cycle                50 ns min 
Operating current
Read (50 ns cycle)              10 mA typ.
Program (avg.)                   10 mA typ.
Erase (avg.)                       10 mA typ.
Standby                              50 PA max. 
   Package
TSOPI48-P-1220-0.50  (Weight:         g typ.)



Pinout

  Connection Diagram


Specifications

SYMBOL RATING VALUE Unit
VCC Power Supply Voltage -0.6 to 4.6 V
VIN Input Voltage -0.6 to 4.6 V
VI/O Input/Output Voltage -0.6 V to VCC  0.3 V (d 4.6 V) V
PD Power Dissipation 0.3 W
Tsolder Soldering Temperature (10s) 260 °C
Tstg Storage Temperature -55 to 150 °C
Topr Operating Temperature 0 to 70 °C



Description

The TC58DVG02A1FT00 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable  Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 8192 blocks. The TC58DVG02A1FT00 has a 528-byte  static register which allows program and read data to be transferred between the register and the memory cell array  in 528-byte increments. The Erase operation of TC58DVG02A1FT00 is implemented in a single block unit (16 Kbytes  512 bytes: 528 bytes  u 32 pages).  

The TC58DVG02A1FT00 is a serial-type memory device which utilizes the I/O pins for both address and data  input/output as well as for command inputs. The Erase and Program operations are automatically executed making  the TC58DVG02A1FT00 most suitable for applications such as solid-state file storage, voice recording, image file memory for still  cameras and other systems which require high-density non-volatile memory data storage.




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