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TC59LM814CFT

Features: • Fully Synchronous Operation• Double Data Rate (DDR)Data input/output are synchronized with both edges of DQS.• Differential Clock (CLK and CLK ) inputs CS , FN and all address input signals are sampled on the positive edge of CLK. Output data (DQs and DQS) is aligned ...

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SeekIC No. : 004514218 Detail

TC59LM814CFT: Features: • Fully Synchronous Operation• Double Data Rate (DDR)Data input/output are synchronized with both edges of DQS.• Differential Clock (CLK and CLK ) inputs CS , FN and all ...

TC59LM814CFT Data Sheet

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Part Number:
TC59LM814CFT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Description



Features:

• Fully Synchronous Operation
• Double Data Rate (DDR)
   Data input/output are synchronized with both edges of DQS.
• Differential Clock (CLK and CLK ) inputs
   CS , FN and all address input signals are sampled on the positive edge of CLK.
   Output data (DQs and DQS) is aligned to the crossings of CLK and CLK .
• Fast clock cycle time of 5 ns minimum
   Clock: 200 MHz maximum
   Data: 400 Mbps/pin maximum
• Quad Independent Banks operation
• Fast cycle and Short Latency
• Bidirectional Data Strobe Signal
• Distributed Auto-Refresh cycle in 7.8 µs
• Self-Refresh
• Power Down Mode
• Variable Write Length Control
• Write Latency = CAS Latency-1
• Programable CAS Latency and Burst Length
   CAS Latency = 3, 4
   Burst Length = 2, 4
• Organization TC59LM814CFT: 4,194,304 words × 4 banks × 16 bits TC59LM806CFT: 8,388,608 words × 4 banks × 8 bits
• Power Supply Voltage VDD: 2.5 V ± 0.15 V VDDQ: 2.5 V ± 0.15 V
• 2.5 V CMOS I/O comply with SSTL-2 (half strength driver)
• Package: 400 × 875 mil, 66 pin TSOPII, 0.65 mm pin pitch (TSOPII66-P-400-0.65)


Specifications

SYMBOL PARAMETER
RATING
 UNIT
VDD Power Supply Voltage
−0.3~ 3.3
 V
VDDQ Power Supply Voltage
−0.3~VDD+ 0.3
 V
VIN Input Voltage
−0.3~VDD+ 0.3
 V
VOUT DQ pin Voltage
−0.3~VDDQ + 0.3
 V
VREF Input Reference Voltage
−0.3~3.3
 V
Topr Operating Temperature
0~70
 °C
Tstg Storage Temperature
−55~150
 °C
Tsolder Soldering Temperature (10 s)
260
 °C
PD Power Dissipation
1
 W
IOUT Short Circuit Output Current
±50
 mA
Caution: Conditions outside the limits listed under "ABSOLUTE MAXIMUM RATINGS" may cause permanent damage to the device.
              The device is not meant to be operated under conditions outside the limits described in the operational section of this specification.
              Exposure to "ABSOLUTE MAXIMUM RATINGS" conditions for extended periods may affect device reliability.


Description

Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFT are Network FCRAMTM containing 268,435,456 memory cells. TC59LM814CFT is organized as 4,194,304-words × 4 banks s× 16 bits, TC59LM806CFT is organized as 8,388,608 words × 4 banks × 8 bits. TC59LM814CFT feature a fully synchronous operation referenced to clock edge whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. TC59LM814/06CFT can operate fast core cycle using the FCRAMTM core architecture compared with regular DDR SDRAM.

TC59LM814CFT is suitable for Network, Server and other applications where large memory density and low power consumption are required. The Output Driver for Network FCRAMTM is capable of high quality fast data transfer under light loading condition.




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