TC58FVM6B2ATG65

The TC58FVM6B2ATG65 is designed as one kind of 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory device that features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation and features commands for Read,

Features of the TC58FVM6B2ATG65 are:(1)Power supply voltage: VDD = 2.3 V to 3.6 V;(2)Operating temperature: Ta = -40°C to 85°C;(3)Simultaneous Read/Write;(4)Auto Program, Auto Page Program;(5)Auto Block Erase, Auto Chip Erase;(6)Fast Program Mode/Acceleration Mode;(7)Block erase architecture 8 * 8 Kbytes/127 * 64 Kbytes;(8)Mode control Compatible with JEDEC standard commands;(9)Automatic Sleep, support for hidden ROM area common flash memory interface (CFI);(10)Erase Suspend/Resume data polling/Toggle bit.

The absolute maximum ratings of the TC58FVM6B2ATG65 can be summarized as:(1)VDD Supply Voltage: -0.6 to 4.6 V;(2)Input Voltage: -0.6 to VDD + 0.5 ( 4.6) V;(3)Input/Output Voltage: -0.6 to VDD + 0.5 ( 4.6) V;(4)Maximum Input Voltage for A9, OE and RESET: 13.0 V;(5)Maximum Input Voltage for WP/ACC: 10.5 V;(6)Power Dissipation: 600 mW;(7)Soldering Temperature (10s): 260 °C;(8)Storage Temperature: -55 to 150 °C;(9)Operating Temperature: -40 to 85 °C;(10)Output Short-Circuit Current: 100 mA. If you want to know more information such as the electrical characteristics about the TC58FVM6B2ATG65, please download the datasheet in www.seekic.com or www.chinaicmart.com.