Features: • Single power supply of 3.3 V ± 0.3 V• Up to 143 MHz clock frequency• Synchronous operations: All signals referenced to the positive edges of clock• Architecture: Pipeline• Organization TC59SM816BFT/BFTL: 4,194,304 words × 4 banks × 16 bits TC59SM808BFT/BFT...
TC59SM816BFT: Features: • Single power supply of 3.3 V ± 0.3 V• Up to 143 MHz clock frequency• Synchronous operations: All signals referenced to the positive edges of clock• Architecture: ...
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SYMBOL |
PARAMETER |
RATING |
UNIT |
NOTES |
VIN,VOUT | Input, Output Voltage |
−0.3~VCC + 0.3 |
V |
1 |
VCC,VCCQ | Power Supply Voltage |
−0.3~4.6 |
V |
1 |
Topr | Operating Temperature |
0~70 |
1 | |
Tstg | Storage Temperature |
−55~150 |
1 | |
Tsolder | Soldering Temperature (10s) |
260 |
1 | |
PD | Power Dissipation |
1 |
W |
1 |
IOUT | Short-Circuit Output Current |
50 |
mA |
1 |
TC59SM816BFT/BFTL is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits and TC59SM808BFT/BFTL is organized as 8,388,608 words × 4 banks × 8 bits and The TC59SM804BFT/BFTL is organized as 16,777,216 words × 4 banks × 4 bits. Fully synchronous operations are referenced to the positive edges of clock input and can transfer data up to 143M words per second. These TC59SM816BFT are controlled by commands setting. Each bank are kept active so that DRAM core sense amplifiers can be used as a cache. The refresh functions, either Auto Refresh or Self Refresh are easy to use. By having a programmable Mode Register, the system can choose the most suitable modes which will maximize its performance. These TC59SM816BFT are ideal for main memory in applications such as work-stations.