TC58NVG1SxB

PinoutSpecifications SYMBOL RATING VALUE UNIT VCC Power Supply Voltage −0.6 to 4.6 V VIN Input Voltage −0.6 to 4.6 V VI/O Input /Output Voltage −0.6 V to VCC + 0.3 V ( 4.6 V) V PD Power Dissipation 0.3 W TSOLDER Soldering Temperature (10 s) 26...

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SeekIC No. : 004514210 Detail

TC58NVG1SxB: PinoutSpecifications SYMBOL RATING VALUE UNIT VCC Power Supply Voltage −0.6 to 4.6 V VIN Input Voltage −0.6 to 4.6 V VI/O Input /Output Voltage −0.6 V to V...

floor Price/Ceiling Price

Part Number:
TC58NVG1SxB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Description



Pinout

  Connection Diagram


Specifications

SYMBOL RATING VALUE UNIT
VCC Power Supply Voltage −0.6 to 4.6 V
VIN Input Voltage −0.6 to 4.6 V
VI/O Input /Output Voltage −0.6 V to VCC + 0.3 V ( 4.6 V) V
PD Power Dissipation 0.3 W
TSOLDER Soldering Temperature (10 s) 260
TSTG Storage Temperature −55 to 150
TOPR Operating Temperature 0 to 70




Description

The TC58NVG1SxB is a single 3.3 V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes/(1024 + 32) words × 64 pages × 2048 blocks. The device has a 2112-byte/1056-word static register which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation of TC58NVG1SxB is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).

The TC58NVG1SxB is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the TC58NVG1SxB most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.




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