PinoutSpecifications SYMBOL RATING VALUE UNIT VCC Power Supply Voltage −0.6 to 4.6 V VIN Input Voltage −0.6 to 4.6 V VI/O Input /Output Voltage −0.6 V to VCC + 0.3 V ( 4.6 V) V PD Power Dissipation 0.3 W TSOLDER Soldering Temperature (10 s) 26...
TC58NVG1SxB: PinoutSpecifications SYMBOL RATING VALUE UNIT VCC Power Supply Voltage −0.6 to 4.6 V VIN Input Voltage −0.6 to 4.6 V VI/O Input /Output Voltage −0.6 V to V...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • Organization Memory cell allay 528 * 32K * 8 Register 528 * 8 Page size 528 byte...
SYMBOL | RATING | VALUE | UNIT |
VCC | Power Supply Voltage | −0.6 to 4.6 | V |
VIN | Input Voltage | −0.6 to 4.6 | V |
VI/O | Input /Output Voltage | −0.6 V to VCC + 0.3 V ( 4.6 V) | V |
PD | Power Dissipation | 0.3 | W |
TSOLDER | Soldering Temperature (10 s) | 260 | |
TSTG | Storage Temperature | −55 to 150 | |
TOPR | Operating Temperature | 0 to 70 |
The TC58NVG1SxB is a single 3.3 V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes/(1024 + 32) words × 64 pages × 2048 blocks. The device has a 2112-byte/1056-word static register which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation of TC58NVG1SxB is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58NVG1SxB is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the TC58NVG1SxB most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.