TC5816BFT

The TC5816BFT is single 5.0-volt 16Mbit NAND electrically erasable and programmable read only memory with spare 64K*8bits. The device is organized as 264 byte*16 pages*512 blocks. The feature of TC5816BFT are as follows: ((1)meomory cell array: 264*8 k*8; (2)register: 264*8; (3)mode: read, reset, auto page program; (4)mode control: serial input/output, command control; (5)power supply: VCC = 5.0V ± 0.5V; (6)access time: cell array-register 25s max, serial read cycle 80ns min; (7)operating current: read 15mA typical, program 40mA typical, erase: 20mA typical, standby 100A; (8)package: 400mil TSOP type.

The absolute maximum ratings of the TC5816BFT are: (1)power supply voltage: -0.5 to 7.0V; (2)input voltage: -0.5 to 7.0V; (3)input/output voltage:  -0.6V to VCC + 0.5V; (4)power dissipation: 0.5W; (5)soldering temperature: -65 to 150; (6)operating temperature: 0 to 70.

The following is about the electrical characteristics of TC5816BFT: (1)input leak current: ± 10 A at VIN = 0V to VCC; (2)output leak current: ± 10 A at VIN = 0.4V to VCC; (3)operating current(serial read): 15mA typical and 30mA max at CE = VIL, IOUT = 0mA, tcycle = 80ns; (4)operating current(command input): 15mA typical and 30mA max at tcycle = 80ns; (5)operating current(data input): 40mA typical and 60mA max at tcycle = 80ns; (6)operating current(address input): 15mA typical and 30mA max at tcycle = 80ns; (7)program current: 40mA typical and 60mA max; (8)erasing current: 20mA typical and 40mA max; (9)standby current: 1mA max at CE = VIH; (10)standby current: 100A max at CE = VCC - 0.2V; (11)high level output voltage: 2.4V min at IOH = -400A; (12)low level output voltage: 0.4V max at IOL = 2.1mA.