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TC59SM04AFT

Features: • Single power supply of 3.3 V ± 0.3 V• Up to 143 MHz clock frequency• Synchronous operations: All signals referenced to the positive edges of clock• Architecture: Pipeline• Organization TC59SM716AFT/AFTL: 2,097,152 words × 4 banks × 16 bits TC59SM708AFT/AFT...

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SeekIC No. : 004514232 Detail

TC59SM04AFT: Features: • Single power supply of 3.3 V ± 0.3 V• Up to 143 MHz clock frequency• Synchronous operations: All signals referenced to the positive edges of clock• Architecture: ...

TC59SM04AFT Data Sheet

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Part Number:
TC59SM04AFT
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Single power supply of 3.3 V ± 0.3 V
• Up to 143 MHz clock frequency
• Synchronous operations: All signals referenced to the positive edges of clock
• Architecture: Pipeline
• Organization
   TC59SM716AFT/AFTL: 2,097,152 words × 4 banks × 16 bits
   TC59SM708AFT/AFTL: 4,194,304 words × 4 banks × 8 bits
   TC59SM704AFT/AFTL: 8,388,608 words × 4 banks × 4 bits
• Programmable Mode register
• Auto Refresh and Self Refresh
• Burst Length: 1, 2, 4, 8, Full page
• CAS Latency: 2, 3
• Single Write Mode
• Burst Stop Function
• Byte Data Controlled by L-DQM, U-DQM (TC59SM716)
• 4K Refresh cycles/64 ms
• Interface: LVTTL
• Package
   TC59SM716AFT/AFTL: TSOPII54-P-400-0.80B
   TC59SM708AFT/AFTL: TSOPII54-P-400-0.80B
   TC59SM704AFT/AFTL: TSOPII54-P-400-0.80B


Pinout

Connection Diagram




Specifications

SYMBOL
PARAMETER
RATING
UNIT
NOTES
VIN, VOUT
 Input, Output Voltage
−0.3~VCC + 0.3
V
1
VCC, VCCQ
 Power Supply Voltage
−0.3~4.6
V
1
Topr
 Operating Temperature
0~70
1
Tstg
 Storage Temperature
−55~150
1
Tsolder
 Soldering Temperature (10s)
260
1
PD
 Power Dissipation
1
W
1
IOUT
 Short-Circuit Output Current
50
mA
1



Description

TC59SM04AFT is a CMOS synchronous dynamic random access memory organized as 2,097,152-words × 4 banks × 16 bits and TC59SM708AFT/AFTL is organized as 4,194,304 words × 4 banks × 8 bits and TC59SM04AFT is organized as 8,388,608 words × 4 banks × 4 bits. Fully synchronous operations are referenced to the positive edges of clock input and can transfer data up to 143M words per second. These devices are controlled by commands setting. Each bank are kept active so that DRAM core sense amplifiers can be used as a cache. The refresh functions, either Auto Refresh or Self Refresh are easy to use. By having a programmable Mode Register, the system can choose the most suitable modes which will maximize its performance. These TC59SM04AFT are ideal for main memory in applications such as work-stations.




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