Features: • Power supply voltage VDD = 2.3 V~3.6 V• Operating temperature Ta = −40°C~85°C• Organization 8M × 8 bits/4M × 16 bits• Block erase architecture 8 × 8 Kbytes/127 × 64 Kbytes• Boot block architecture TC58FVM6T2A: top boot block TC58FVM6B2A: bottom boot ...
TC58FVM6T2A: Features: • Power supply voltage VDD = 2.3 V~3.6 V• Operating temperature Ta = −40°C~85°C• Organization 8M × 8 bits/4M × 16 bits• Block erase architecture 8 × 8 Kbytes/...
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Features: • Organization Memory cell allay 528 * 32K * 8 Register 528 * 8 Page size 528 byte...
SYMBOL | PARAMETER |
RANGE |
UNIT |
VDD VIN VDQ VIDH VACCH PD Tsolder Tstg Topr IOSHORT |
VDD Supply Voltage Input Voltage Input/Output Voltage Maximum Input Voltage for A9, OE and RESET (2) Maximum Input Voltage for /ACC WP (2) Power Dissipation Soldering Temperature (10s) Storage Temperature Operating Temperature Output Short-Circuit Current(3) |
−0.6~4.6 −0.6~VDD + 0.5 ( 4.6)(1) −0.6~VDD + 0.5 ( 4.6)(1) 13.0 10.5 600 260 −55~150 −40~85 100 |
V V V V V mW °C °C °C mA |
The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 words × 8 bits or as 4194304 words × 16 bits. The TC58FVM6T2A/B2A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVM6T2A/B2A also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.