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TC58FVT641XB-10

Features: • Power supply voltage VDD = 2.7 V~3.6 V• Operating temperature Ta = −40°C~85°C• Organization 8M * 8 bits / 4M * 16 bits• Functions Simultaneous Read/Write Auto Program, Auto Erase Fast Program Mode / Acceleration Mode Program Suspend/Resume Erase Suspend/Re...

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SeekIC No. : 004514204 Detail

TC58FVT641XB-10: Features: • Power supply voltage VDD = 2.7 V~3.6 V• Operating temperature Ta = −40°C~85°C• Organization 8M * 8 bits / 4M * 16 bits• Functions Simultaneous Read/Write Au...

TC58FVT641XB-10 Data Sheet

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Part Number:
TC58FVT641XB-10
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Power supply voltage
   VDD = 2.7 V~3.6 V
• Operating temperature
   Ta = −40°C~85°C
• Organization
   8M * 8 bits / 4M * 16 bits
• Functions
   Simultaneous Read/Write
   Auto Program, Auto Erase
   Fast Program Mode / Acceleration Mode
   Program Suspend/Resume
   Erase Suspend/Resume
   data polling / Toggle bit
   block protection, boot block protection
   Automatic Sleep, support for hidden ROM area
   common flash memory interface (CFI)
   Byte/Word Modes
• Block erase architecture
   8 * 8 Kbytes / 127 * 64 Kbytes
• Boot block architecture
   TC58FVT641FT/XB: top boot block
   TC58FVB641FT/XB: bottom boot block
• Mode control
   Compatible with JEDEC standard commands
• Erase/Program cycles
   105 cycles typ.
• Access time
   70 ns (CL: 30 pF)
   100 ns (CL: 100 pF)
• Power consumption
   10 A (Standby)
   30 mA (Read operation)
   15 mA (Program/Erase operations)
• Package
   TC58FVT641/B641FT:
   TSOPI48-P-1220-0.50 (weight: 0.52 g)
TC58FVT641/B641XB:
P-TFBGA63-0911-0.80AZ (Weight: 0.170 g)


Application

Simultaneous Read/Write
Auto Program, Auto Erase
Fast Program Mode / Acceleration Mode
Program Suspend/Resume
Erase Suspend/Resume
data polling / Toggle bit
block protection, boot block protection
Automatic Sleep, support for hidden ROM area
common flash memory interface (CFI)
Byte/Word Modes


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
RANGE
UNIT
VDD VDD Supply Voltage
−0.6~4.6
V
VIN Input Voltage
−0.6~VDD + 0.5 ( 4.6)
V
VDQ Input/Output Voltage
−0.6~VDD + 0.5 ( 4.6)
V
VIDH Maximum Input Voltage for A9, OE and RESET
13.0
V
VACCH Maximum Input Voltage for WP/ACC
10.5
V
PD Power Dissipation
126
mW
Tsolder Soldering Temperature (10s)
260
°C
Tstg Storage Temperature
−55~150
°C
Topr Operating Temperature
−40~85
°C
IOSHORT Output Short-Circuit Current
100
mA



Description

The TC58FVT641XB-10 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVT641XB-10 features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVT641XB-10 also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.




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