TC58256FT

The TC58256FT is single 3.3-V, 256-Mbit NAND electrically erassble and programmable read-only memory organized as 528 bytes * 32pages * 2048 blocks.The feature of TC58256FT are as follows: (1)memory cell array: 528*64K*8; (2)register:528*8; (3)modes: read, reset, auto page program; (4)mode control: serial input/output; (5)power supply: VCC = 3.3V±0.3V; (6)access time: cell array-register: 10s max; (7)opeating current: read 10mA typ.

The absolute maximum ratings of the TC58256FT are: (1)power supply voltage: -0.6 to 4.5V; (2)input voltage: -0.6 to 4.6; (3)input/output voltage: -0.6V~VCC+0.3V; (4)soldering temperature: 260; (5)storage temperature: -55 to 150; (6)operating temperature: 0 to 70.

The following is about the electrical characteristics of TC58256FT: (1)input leakage current: ±10 A max at VIN = 0V to VCC; (2)output leakage current: ±10 A max at VOUT = 0.4V to VCC; (3)operating current(serial read): 10mA typical and 30mA max at CE = VIL, IOUT = 0mA, tcycle = 50ns; (4)operating current(command input): 10mA typical and 30mA max at  tcycle = 50ns; (5)operating current(data input): 10mA typical and 30mA max at tcycle = 50ns; (6)operating current(address input): 10mA typical and 30mA max at tcycle = 50ns; (7)programming current: 10mA typical and 30mA max; (8)standby current: 1mA max at CE = VIH; (9)standby current: 100A max at CE = VCC - 0.2V; (10)high level output voltage: 2.4V min at IOL = -400A; (11)low level output voltage: 0.4V max at IOL =2.1mA; (12)output current of R/B pin: 8mA typical at VOL = 0.4V.