© 2008-2012 SeekIC.com Corp.All Rights Reserved.
Response in 12 hours
Mfg:ON Pack:TO-252 D/C:2004 Vendor:Other Category:Other
The MTD3055VL1 is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, the MTD3055V...
Mfg:FAIRC Pack:TO-252(DPAK) D/C:09+ Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET N-CHAN 60V 12A D-PAKMTD3055VL is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Ju...
Mfg:MOT/ON Pack:05+ D/C:TO Vendor:Other Category:Other
The MTD3055V1 is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, the MTD3055V1...
Mfg:FAIRC Pack:TO-252(DPAK) D/C:09+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
MOSFET N-CHAN 60V 12A D-PAKMTD3055V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Jus...
Mfg:MOT/ON Pack:TO Vendor:Other Category:Other
Mfg:ON Pack:05+ D/C:TO-252 Vendor:Other Category:Other
The MTD2N50E uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition this advanced TMOS EFET is designed to withstand high energy in the ava...
Mfg:ON Pack:05+ D/C:TO-252 Vendor:Other Category:Other
MTD2N40E is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Jus...
Vendor:Other Category:Other
MTD2955V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Jus...
Mfg:ON Pack:05+ Vendor:Other Category:Other
The MTD2955E is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed ...
Vendor:Other Category:Other
MTD214 contains integrated functions of the Ethernet encoder/decoder and UTP/AUI interface. The encoder/decoder conforms to IEEE 802.3 protocol and performance requirements while also retaining compatibility with most po...
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
The MTD20P06HDL is designed to withstand high energy in the avalanche and commutation modes.The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for lowvoltage,highspeed s...
Mfg:MOT/ON Pack:TO Vendor:Other Category:Other
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
The MTD20P03HDL is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high sp...
Mfg:SANYO Pack:TO-220 Vendor:Other Category:Other
The MTD20P03 is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed...
Mfg:ON Pack:05+ D/C:TO-252 Vendor:Other Category:Other
Mfg:ON Pack:SOT252 D/C:03+ Vendor:Other Category:Other
The MTD20N06HDL is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for lowvoltage, highspeed...
Mfg:ON Pack:TO-252/251 D/C:06+ Vendor:Other Category:Other
The MTD20N06HD is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high spe...
Mfg:Motorola Pack:SOT-252 Vendor:Other Category:Other
MTD20N06 is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Jus...
D/C:07+ Vendor:Other Category:Other
The MTD20N03HDL is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high sp...
Mfg:SHINDENG.. Vendor:Other Category:Other
Mfg:SHINDENG.. Vendor:Other Category:Other
Mfg:SHINDENG.. Vendor:Other Category:Other
Mfg:SHINDENGEN Pack:ZIP-27 D/C:0416+ Vendor:Other Category:Other
Mfg:SHIDENG Vendor:Other Category:Other
Mfg:ON Pack:05+ D/C:TO-252 Vendor:Other Category:Other
TheMTD1P50E is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed ...
Mfg:ON Pack:TO252-3 Vendor:Other Category:Other
The MTD1P40E uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the av...
Mfg:MOTOROLA D/C:02+ Vendor:Other Category:Other
The MTD1N80E uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition this advanced TMOS EFET is designed to withstand high energy in the ava...
Mfg:ON Pack:05+ D/C:TO-252 Vendor:Other Category:Other
The MTD1N60E uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition this advanced TMOS EFET is designed to withstand high energy in the ava...
Mfg:ON Pack:05+ D/C:TO-252 Vendor:Other Category:Other
The MTD1N50E uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition this advanced TMOS EFET is designed to withstand high energy in the ava...
Mfg:ON Pack:04+ D/C:TO-252 Vendor:Other Category:Other
MTD15N06V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Ju...
Pack:252 D/C:05+ Vendor:Other Category:Other
MTD15N06 is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Jus...
Mfg:ON Pack:05+ D/C:TO-252 Vendor:Other Category:Other
The MTD14N10E is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high spee...
Mfg:SHINDENG.. Vendor:Other Category:Other
Mfg:ON Vendor:Other Category:Other
The MTD1312 is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed ...
Mfg:ON Pack:05+ D/C:TO-252 Vendor:Other Category:Other
The MTD1302 is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed ...
Mfg:ON Pack:05+ D/C:TO-252 Vendor:Other Category:Other
This MTD12N06EZL is designed to withstand high energy in the avalanche and mode and switch efficiently. This MTD12N06EZL also offers a gatetosource zener diode designed for 4 kV ESD protection (human body model).• ...
Mfg:SHINDENG.. Vendor:Other Category:Other
Mfg:SHI Pack:DIP-27 D/C:00+ Vendor:Other Category:Other
Mfg:SHINDENGEN Pack:ZIP27 Vendor:Other Category:Other
Mfg:ON Pack:05+ D/C:TO-252 Vendor:Other Category:Other
This MTD10N10EL is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain?to?source diode with a fast recovery time. Designed for low voltage, high s...
Vendor:Other Category:Other
MTCVO31 features:14 Pin DIP Compatible, Tight Stability Over Wide Temperature, Voltage Control - Applications:PCS, Cellular Equipment, Communications Equipment, Portable Equipment
Vendor:Other Category:Other
MTCVO25 features: Leadless SMT Standard Footprint, Low Power 3 Volt Operation, Internal Trimmer and Trimmerless Versions - Applications:PCS/Cellular Phones, Base Stations, Portable Equipment
Vendor:Other Category:Other
MTCVO21, Small size, high precision TCVCXO available in standard frequencies fortelecommunications and other RF applications requiring clipped sinewave output with low power consumption. Operating voltage of 3 V or 5 V a...
Vendor:Other Category:Other
MTCVO11, Small size, high precision TCVCXO available in standard frequencies for telecommunications and other RF applications requiring clipped sinewave output with low power consumption. Operating voltage of 3 V or 5 V ...
Vendor:Other Category:Other
MTCO31 Series, 14 pin DIP, Clipped Sinewave, 5 V TCXO - Features:14 Pin DIP Compatible and Tight Stability Over Wide Temperature - Applications: PCS, Cellular Equipment, Communications Equipment, and Portable Equipment
Vendor:Other Category:Other
MTCO25A Series, 9.8x11.6 mm, Clipped Sinewave, 3 V TCXO - Features:Miniature Size, Leadless SMT Standard Footprint, Low Power 3 Volt Operation - Applications: PCS/Cellular Phones, Communications Equipment, Portable Equip...
Vendor:Other Category:Other
MTCO21 Series, 13.1x11.7 mm, Clipped Sinewave, 3 or 5 V TCXO - Small size, high precision TCXO available in standard frequencies fortelecommunications and other RF applications requiring clipped sinewaveoutput with low p...
Vendor:Other Category:Other
MTCO11 Series, 13.1x11.7 mm, Clipped Sinewave, 3 or 5 V TCXO - Small size, high precision TCXO available in standard frequencies fortelecommunications and other RF applications requiring clipped sinewaveoutput with low p...
Vendor:Other Category:Other
The MTC600 series of Power Modules are designed for use in MicroTCA systems and can support shelves, cube and other implementations and is compliant to PICMG MicroTCA .0 Revision 1.0 specification.The MTC600 Power Module...
Vendor:Other Category:Other
The MTC50150-TB-C2 is designed as a low cost ADSL bridge and LAN router. One 10/100Mbits Ethernet port allows the connection of a LAN to the WAN in bridged or routed mode. The data traffic can be routed through a local t...
Vendor:Other Category:Other
The MTC50150 is a low cost ADSL bridge and LAN router. One 10/100Mbits Ethernet port allows the connection of a LAN to the WAN in bridged or routed mode. The MTC50150 can be routed through a local terminal by using the L...
Mfg:ST Pack:QFP D/C:0239+ Vendor:Other Category:Other
The MTC20454 is the first DynaMiTe ADSL (Asynchronous Digital Subscriber Line) analog front end designed specifically for the central office. It is afifth generation Analog Front End (AFE) designed for DMT based ADSL mod...
Mfg:N/A Pack:. D/C:08+ Vendor:Other Category:Other
The MTC20154 is the fifth generation Analog Front End (AFE) designed for DMT based ADSL (Asynchronous Digital Subscriber Line) modems compliant with ANSI T1.413 category 2 standard. It includes one 12 bit DAC and one 13 ...
Vendor:Other Category:Other
The MTC20136 is a dedicated controller chip, specifically designed to control operations of the STMicroelectronics DynaMiTe chipset. The MTC20136 offers direct glueless interfaces to the MTC20135 and MTC20455 DMT/ATM tra...
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:MOT Pack:D2PAK D/C:07+ Vendor:Other Category:Other
The MTB9N25E has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(...
Vendor:Other Category:Other
The MTB9N25D has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(...
Mfg:ON Pack:05+ D/C:TO-263 Vendor:Other Category:Other
The MTB8N50E has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(...
Vendor:Other Category:Other
The MTB8N50D has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(...
Mfg:ON Pack:05+ D/C:TO-263 Vendor:Other Category:Other
The MTB75N06HD has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RD...
Mfg:MOTOROLA Vendor:Other Category:Other
The MTB75N05HD has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RD...
Mfg:ON Pack:05+ D/C:TO-263 Vendor:Other Category:Other
The MTB75N03HDL has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower R...
Vendor:Other Category:Other
The MTB75N03HDD has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower R...
Mfg:MOT/ON Pack:TO-263 D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
The MTB6N60E1D is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high spee...
D/C:9847 Vendor:Other Category:Other
This MTB6N60E1 is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high spee...
Mfg:ON Pack:05+ D/C:TO-263 Vendor:Other Category:Other
The MTB6N60E has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(...
Vendor:Other Category:Other
The MTB6N60D has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(...
Vendor:Other Category:Other
D/C:07+ Vendor:Other Category:Other
The MTB60N06HD has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RD...
Mfg:ON Pack:05+ D/C:TO-263 Vendor:Other Category:Other
The MTB60N05HDL has the capability of housing a larger die than any existing surface mount package which allows MTB60N05HDL to be used in applications that require the use of surface mount components with higher power an...
Mfg:ON Pack:05+ D/C:TO-263 Vendor:Other Category:Other
The MTB55N06Z is designed to withstand high energy in the avalanche mode and switch efficiently. The MTB55N06Z also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching ap...
Vendor:Other Category:Other
The MTB55N06D is designed to withstand high energy in the avalanche mode and switch efficiently. The MTB55N06D also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching ap...
Mfg:MOT Pack:D2PAK D/C:07+ Vendor:Other Category:Other
MTB52N06VL is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. J...
Vendor:Other Category:Other
MTB52N06VD is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. J...
Mfg:ON Pack:05+ D/C:TO-263 Vendor:Other Category:Other
MTB52N06V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Ju...
Vendor:Other Category:Other
MTB52N06D is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Ju...
Mfg:ONS Pack:D2PAK D/C:09+ Vendor:ON Semiconductor Category:Discrete Semiconductor Products
MOSFET P-CH PWR LL 50A 30V D2PAKThe MTB50P03HDL has the capability of housing a larger die than any existing surface mount package which allows MTB50P03HDL to be used in applications that require the use of surface mount components with higher power an...
Vendor:Other Category:Other
The MTB50P03HDD has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower R...
Mfg:ON Pack:TO-263 D/C:05+ Vendor:Other Category:Other
MTB50N06VL is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. J...
Vendor:Other Category:Other
MTB50N06VD is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. J...
Mfg:MOTOROLA D/C: 00+ Vendor:Other Category:Other
MTB50N06V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Ju...
Mfg:MOT Pack:D2PAK D/C:07+ Vendor:Other Category:Other
The MTB50N06EL is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. This Logic Level Series part is specified to operate with level logic...
Vendor:Other Category:Other
The MTB50N06ED is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. This Logic Level Series part is specified to operate with level logic...
Vendor:Other Category:Other
MTB50N06D is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Ju...
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The MTB4N80E1D uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the ...
Mfg:MOT/ON Pack:TO-263 D/C:05+ Vendor:Other Category:Other
The MTB4N80E1 uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the a...
Mfg:ON Pack:05+ D/C:TO-263 Vendor:Other Category:Other
The MTB4N80E has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(...
Vendor:Other Category:Other
The MTB4N80D has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(...
Mfg:ON Pack:05+ D/C:TO-263 Vendor:Other Category:Other
The MTB40N10E is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed...
Vendor:Other Category:Other
The MTB40N10D is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed...
Mfg:ON Pack:05+ D/C:TO-263 Vendor:Other Category:Other
The MTB3N60E is designed to withstand high energy in the avalanche mode and switch efficiently. The MTB3N60E also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching appl...
Vendor:Other Category:Other
The MTB3N60D is designed to withstand high energy in the avalanche mode and switch efficiently. The MTB3N60D also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching appl...
Mfg:MOTO Pack:03+ D/C:TO-263 Vendor:Other Category:Other
The MTB3N120E has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS...
Vendor:Other Category:Other
The MTB3N120D has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS...
Mfg:ON Pack:05+ D/C:TO-263 Vendor:Other Category:Other
The MTB3N100E has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS...
© 2008-2012 SeekIC.com Corp.All Rights Reserved.