MTD10N10EL

Features:

• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm, 13−inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	100	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	100	Vdc
GatetoSource Voltage - Continuous GatetoSource Voltage - Nonrepetitive (tp 10 ms)	VGS VGSM	± 15 ± 20	Vdc Vpk
Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s)	ID ID IDM	10 6.0 35	Adc Apk
Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size	PD	40 0.32 1.75	Watts W/°C Watts
Operating and Storage Temperature Range	TJ, Tstg	55 to 150	°C
Single Pulse DraintoSource Avalanche Energy - STARTING TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, PEAK IL =10Apk, L = 1.0mH, RG = 25)	EAS	50	mJ
Thermal Resistance - Junction to Case - Junction to Ambient (Note 1) - Junction to Ambient (Note 2)	RJC RJA RJA	3.13 100 71.4	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	TL	260	°C

1. When surface mounted to an FR4 board using minimum recommended pad size.
2. When surface mounted to an FR4 board using 0.5 sq in pad size.


Description

This MTD10N10EL is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain?to?source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTD10N10EL particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.