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MTB52N06V

Features: New Features of TMOS V• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on)Technology• Faster Switching than EFET PredecessorsFeatures Common to TMOS V and TMOS EFETs• Avalanche Energy Specified• IDSS and VDS(on) Spec...

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MTB52N06V: Features: New Features of TMOS V• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on)Technology• Faster Switching than EFET PredecessorsFea...

MTB52N06V Data Sheet

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Part Number:
MTB52N06V
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

New Features of TMOS V
• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on)Technology
• Faster Switching than EFET Predecessors
Features Common to TMOS V and TMOS EFETs
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
• Surface Mount Package Available in 16 mm 13inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number


Specifications

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
GatetoSource Voltage - Continuous
- NonRepetitive (tp  10 ms)
VGS
VGSM
±20
±25
Vdc
Vpk
Drain Current - Continuous
- Continuous @ 100
- Single Pulse (tp  10 s)
ID
ID
IDM
52
41
182
Adc
Apk
Total Power Dissipation @ 25
Derate above 25
Total Power Dissipation @ TA = 25 (1)
PD
188
1.25
3.0
Watts
W/
Watts
Operating and Storage Temperature Range
TJ, Tstg
55 to 175
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25
(VDD = 25Vdc, VGS = 10 Vdc, Peak IL =52 Apk, L = 0.3 mH, RG = 25 )
EAS
406
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
- Junction to Ambient (1)
RJC
RJA
RJA
0.8
62.5
50
/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds
TL
260

(1) When surface mounted to an FR4 board using the minimum recommended pad size.

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET, Designer's, and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.


Description

MTB52N06V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, MTB52N06V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, the MTB52N06V is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.




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