Features: New Features of TMOS 7• Ultra Low OnResistance Provides Higher Efficiency• Reduced Gate ChargeFeatures Common to TMOS 7 and TMOS EFETS• Logic Level Gate Drive• Avalanche Energy Specified• Diode Characterized for Use in Bridge Circuits• IDSS and VDS(on)...
MTB71040L: Features: New Features of TMOS 7• Ultra Low OnResistance Provides Higher Efficiency• Reduced Gate ChargeFeatures Common to TMOS 7 and TMOS EFETS• Logic Level Gate Drive• Aval...
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Features: • Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable t...
Features: • Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable t...
Features: • Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable t...
Rating |
Symbol |
Value |
Unit |
DrainSource Voltage |
VGSS |
100 |
Vdc |
DrainGate Voltage (RGS = 1.0 M) |
VDGR |
100 |
Vdc |
GateSource Voltage - Continuous - NonRepetitive (tp10 ms) |
VGS VGSM |
±20 ±25 |
|
Drain - Continuous - Continuous @ 100°C - Single Pulse (tp10 s) |
ID ID IDM |
60 48 210 |
Adc Apk |
Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C(1) |
PD |
242 1.61 3.0 |
Watts W/°C Watts |
Operating and Storage Temperature Range |
TJ,Tstg |
55 to 175 |
°C |
Single DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 75 V, VGS = 10 Vdc, IL = 60 A, L = 0.3 mH, RG = 25 ) |
EAS |
540 |
mJ |
Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient - JunctiontoAmbient |
RJC RJA RJA |
0.62 62.5 50 |
°C/W |
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds |
TL |
260 |
°C |