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MTB75N03HDD

Features: • Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated Temperature• Ultra Low RDS(on), HighCell Density, HDTMOS&#...

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SeekIC No. : 004430502 Detail

MTB75N03HDD: Features: • Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDS...

MTB75N03HDD Data Sheet

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Part Number:
MTB75N03HDD
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Ultra Low RDS(on), HighCell Density, HDTMOS
• Short Heatsink Tab Manufactured - Not sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm 13inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number


Specifications

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
25
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
25
Vdc
GatetoSource Voltage - Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 15
± 20
Vdc
Vpk
Drain Current - Continuous
- Continuous @ 100
- Single Pulse (tp 10 s)
ID
ID
IDM
75
59
225
Adc
Apk
Total Power Dissipation @ 25
Derate above 25
Total Power Dissipation @ TA = 25 (1)
PD
125
1.0
2.5
Watts
W/
Watts
Operating and Storage Temperature Range
55 to 150
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25
(VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 75 Apk, L = 0.1 mH, RG = 25 W)
EAS
280
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
- Junction to Ambient (1)
RJC
RJA
RJA
1.0
62.5
50
/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds
TL
260

(1) When mounted with the minimum recommended pad size.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

EFET and HDTMOS are trademarks of Motorola, Inc.

TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.


Description

The MTB75N03HDD has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced highcell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The MTB75N03HDD design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTB75N03HDD is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.




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