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MTB3N60E

Features: • Avalanche Energy Capability Specified at Elevated Temperature• Low Stored Gate Charge for Efficient Switching• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode• SourcetoDrain Diode R...

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MTB3N60E: Features: • Avalanche Energy Capability Specified at Elevated Temperature• Low Stored Gate Charge for Efficient Switching• Internal SourcetoDrain Diode Designed to Replace External...

MTB3N60E Data Sheet

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Part Number:
MTB3N60E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode


Specifications

Rating Symbol Value Unit
DrainSource Voltage VDSS 600 Vdc
DrainGate Voltage (RGS = 1.0 M) VDGR 600 Vdc
GateSource Voltage - Continuous
- Nonrepetitive		 VGS
VGSM		 ±20
±40		 Vdc
Vpk
Drain Current - Continuous
- Continuous @ 100
- Pulsed		 ID
ID
IDM		 3.0
2.4
14		 Adc
Total Power Dissipation @ TC = 25
Derate above 25
Total Power Dissipation @ TA = 25(1)		 PD 75
0.6
2.5		 Watts
W/
Watts
Operating and Storage Temperature Range TJ, Tstg 55 to 150



Description

The MTB3N60E is designed to withstand high energy in the avalanche mode and switch efficiently. The MTB3N60E also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.




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