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Index M : MT48H16M16LF,MT47H128M4BT-5E ES,MT28F320A18,
MT48H16M16LF
Vendor:Other Category:Other
The Micron® 256Mb Mobile SDRAM MT48H16M16LF is a high-speed CMOS, dynamic random-access memory containing 268,435,456-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals ar...MT47H128M4BT-5E ES
Vendor:Other Category:Other
The MT47H128M4BT-5E ES is a kind of 32 Meg*4*4 banks DDR2 SDRAM (Synchronous Dynamic Random Access Memory). It uses a double data rate architecture to achieve high-speed operation. The MT47H128M4BT-5E ES provides for pro...MT47H128M4BT-5E
Vendor:Other Category:Other
The MT47H128M4BT-5E is a kind of 32 Meg*4*4 banks DDR2 SDRAM (Synchronous Dynamic Random Access Memory). It uses a double data rate architecture to achieve high-speed operation. The MT47H128M4BT-5E provides for programma...MT47H128M4BT-37V
Vendor:Other Category:Other
The MT47H128M4BT-37V is a kind of 32 Meg*4*4 banks DDR2 SDRAM (Synchronous Dynamic Random Access Memory). It uses a double data rate architecture to achieve high-speed operation. The MT47H128M4BT-37V provides for program...MT47H128M4BT-37E
Vendor:Other Category:Other
The MT47H128M4BT-37E is a kind of 32 Meg*4*4 banks DDR2 SDRAM (Synchronous Dynamic Random Access Memory). It uses a double data rate architecture to achieve high-speed operation. The MT47H128M4BT-37E provides for program...MT47H128M4BT-3
Vendor:Other Category:Other
The MT47H128M4BT-3 is a kind of 32 Meg*4*4 banks DDR2 SDRAM (Synchronous Dynamic Random Access Memory). It uses a double data rate architecture to achieve high-speed operation. The MT47H128M4BT-3 provides for programmabl...MT4730NF−WT
Vendor:Other Category:Other
MT4730NF−UBL
Vendor:Other Category:Other
MT470
Vendor:Other Category:Other
The MT470 is designed as one kind of truncated LED lamp that has five points of features:(1)all plastic mold type;(2)low drive current, high intensity light emission;(3)recommended forward current: IF=15 to 20 mA (DC);(4...MT46V8M16TG-75L
Vendor:Other Category:Other
The MT46V8M16TG-75L is a high-speed CMOS, dynamic random-access memory that operates at a frequency of 167 MHz (tCK=6ns) with a peak data transfer rate of 333Mb/s/p. DDR333 continues to use the JEDEC standard SSTL_2 inte...MT46V8M16
Mfg: Pack: D/C:TSSOP Vendor:Other Category:Other
The DDR333 SDRAM MT46V8M16 is a high-speed CMOS, dynamic random-access memory that operates at a frequency of 167 MHz (tCK=6ns) with a peak data transfer rate of 333Mb/s/p. DDR333 continues to use the JEDEC standard SSTL...MT46V64M8 16
Vendor:Other Category:Other
The 512Mb DDR SDRAM MT46V64M8 16 is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quadbank DRAM.The 512Mb DDR SDRAM MT46V64M8 16 uses a double data rate a...MT46V32M4
Vendor:Other Category:Other
The DDR333 SDRAM MT46V32M4 is a high-speed CMOS, dynamic random-access memory that operates at a frequency of 167 MHz (tCK=6ns) with a peak data transfer rate of 333Mb/s/p. DDR333 continues to use the JEDEC standard SSTL...MT46V32M16TG-6T
Vendor:Other Category:Other
The MT46V32M16TG-6T is one member of the 512Mb DDR SDRAM which designed as high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. MT46V32M16TG-6T operates from a differential clock (CK and CK#); the c...MT46V32M16P-6T
Vendor:Other Category:Other
The MT46V32M16P-6T is one member of the 512Mb DDR SDRAM which designed as high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. MT46V32M16P-6T operates from a differential clock (CK and CK#); the cro...MT46V32M16 8
Vendor:Other Category:Other
The 512Mb DDR SDRAM MT46V32M16 8 is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quadbank DRAM.The 512Mb DDR SDRAM MT46V32M16 8 uses a double data rate a...MT46V2M32LG
Vendor:Other Category:Other
The 64Mb (x32) DDR SDRAM MT46V2M32LG is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quadbank DRAM.The 64Mb DDR SDRAM MT46V2M32LG uses a double data rate ar...MT46V16M8
Vendor:Other Category:Other
The DDR400 SDRAM MT46V16M8 is a high-speed CMOS, dynamic random-access memory that operates at a frequency of 200 MHz (tCK=5ns) with a peak data transfer rate of 400Mb/s. DDR400 continues to use the JEDEC standard SSTL_2...MT46V16M16TG-6T
Vendor:Other Category:Other
The MT46V16M16TG-6T is one member of the 512Mb DDR SDRAM which designed as high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. MT46V16M16TG-6T operates from a differential clock (CK and CK#); the c...MT46V16M16P-6T
Vendor:Other Category:Other
The MT46V16M16P-6T is one member of the 512Mb DDR SDRAM which designed as high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. MT46V16M16P-6T operates from a differential clock (CK and CK#); the cro...MT46V128M4 32
Vendor:Other Category:Other
The 512Mb DDR SDRAM MT46V128M4 32 is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quadbank DRAM.The 512Mb DDR SDRAM MT46V128M4 32 uses a double data rate a...MT46H8M32LF 2
Vendor:Other Category:Other
MT46H64M32L2KQ6IT
Vendor:Other Category:Other
The MT46H64M32L2KQ6IT is designed as one kind of mobile double data rate (DDR) SDRAM that belongs to the MT46H64M32. Features of the MT46H64M32L2KQ6IT are:(1)?VDD = +1.8V ?.1V, VDDQ = +1.8V ?.1V; (2)?Bidirectional data s...MT46H64M32L2JG6IT
Vendor:Other Category:Other
The MT46H64M32L2JG6IT is designed as one kind of mobile double data rate (DDR) SDRAM that belongs to the MT46H64M32. Features of the MT46H64M32-L2KQ6IT are:(1)?VDD = +1.8V ?.1V, VDDQ = +1.8V ?.1V; (2)?Bidirectional data ...MT46H16M16LF 4
Vendor:Other Category:Other
MT4532-700Y
Mfg:BOURNS Vendor:Other Category:Other
MT4532-250Y
Mfg:BOURNS Vendor:Other Category:Other
MT4532-121Y
Mfg:BOURNS Vendor:Other Category:Other
MT4363-HR-A
Vendor:Other Category:Other
MT430-Y-A
Vendor:Other Category:Other
MT430-HR-A
Vendor:Other Category:Other
MT430-G-A
Vendor:Other Category:Other
MT42C4256
Vendor:Other Category:Other
MT41J256M4
Vendor:Other Category:Other
The DDR3 SDRAM MT41J256M4 uses a double data rate architecture to achieve high-speed operation. The double data rate architecture of MT41J256M4 is an 8n-prefetch architecture with an interface designed to transfer two da...MT4197-BL-A
Vendor:Other Category:Other
MT4194-HR-A
Vendor:Other Category:Other
MT4164S4-HR-A
Vendor:Other Category:Other
MT4164S4-HR6-2-A
Vendor:Other Category:Other
MT4152-HR-A
Vendor:Other Category:Other
MT4118-O-A
Vendor:Other Category:Other
MT4118-HR-A
Vendor:Other Category:Other
MT4118A-HRSB-A
Vendor:Other Category:Other
MT4103-O-A
Vendor:Other Category:Other
MT4103-HR-A
Vendor:Other Category:Other
MT4093-Y(2mA)-A
Vendor:Other Category:Other
MT4093-UR(2mA)-A
Vendor:Other Category:Other
MT4093-HR(2mA)-A
Vendor:Other Category:Other
MT4093-G(2mA)-A
Vendor:Other Category:Other
MT4
Vendor:Other Category:Other
MT3S41T
Vendor:Other Category:Other
MT3S36T
Vendor:Other Category:Other
MT3S06U
Vendor:Other Category:Other
The MT3S06U is a kind of silicon NPN planar epitaxial transistor for VHF-UHF band low noise amplifier applications. There are some features of MT3S06U as follows: (1)low noise figure: NF=1.6 dB (VCE=3 V, IC=3 mA, f=2 GHz...MT3S06T
Vendor:Other Category:Other
The MT3S06T is a kind of TOSHIBA transistor(silicon NPN epitaxial planar type). MT3S06T has two unique features: (1) low noise figure which is 1.6 dB when VCE is 3 V , Ic is 3 mA and f is 2 GHz; (2) high gain which is 9....MT3S05T
Mfg:ON Pack:05+ Vendor:Other Category:Other
MT3S03AU
Vendor:Other Category:Other
The MT3S03AU is a kind of silicon NPN planar epitaxial transistor for VHF-UHF band low noise amplifier applications. There are some features as follows: (1)low noise figure: NF=1.4 dB; (2)high gain: gain=8 dB at f=2 GHz....MT3S03AS
Vendor:Other Category:Other
The MT3S03AS is designed for VHF-UHF band low noise amplifier applications.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product character...MT3700W−UV
Vendor:Other Category:Other
MT3418A-UY-A
Vendor:Other Category:Other
MT3403A-UY-A
Vendor:Other Category:Other
MT34013
Vendor:Other Category:Other
MT3371B
Vendor:Other Category:Other
The MT3371B is a family of high performance DTMF receivers which decode all 16 tone pairs into a 4-bit binary code. These devices incorporate an AGC for wide dynamic range and are suitable for end-to-endsignalling. The M...MT3370B/71B
Vendor:Other Category:Other
The MT3370B/71B is a family of high performance DTMF receivers which decode all 16 tone pairs into a 4-bit binary code. These devices incorporate an AGC for wide dynamic range and are suitable for end-to-end signalling. ...MT3370B
Vendor:Other Category:Other
The MT3370B is a family of high performance DTMF receivers which decode all 16 tone pairs into a 4-bit binary code. These devices incorporate an AGC for wide dynamic range and are suitable for end-to-endsignalling. The M...MT3363A-UY-A
Vendor:Other Category:Other
MT3303-Y-A
Vendor:Other Category:Other
MT3303B-UY-A
Vendor:Other Category:Other
MT32LD3264A X
Vendor:Other Category:Other
The Micron(R) MT8LD864A X, MT16LD1664A X and MT32LD3264A X are randomly accessed 64MB,128MB and 256MB memories organized in a x64 con-figuration. They are specially processed to operate from 3V to 3.6V for low-voltage me...MT3270B/71B,
Vendor:Other Category:Other
The MT3270B/71B is a family of high performance DTMF receivers which decode all 16 tone pairs into a 4-bit binary code. These devices incorporate an AGC for wide dynamic range and are suitable for end-to-end signalling. ...MT3270B
Pack:DIP8 Vendor:Other Category:Other
The MT3270B is a family of high performance DTMF receivers which decode all 16 tone pairs into a 4-bit binary code. These devices incorporate an AGC for wide dynamic range and are suitable for end-to-endsignalling. The M...MT3200A-UR
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
MT3197-Y-A
Vendor:Other Category:Other
MT3195-Y-A
Vendor:Other Category:Other
MT3171B
Vendor:Other Category:Other
The MT3171B is a family of high performance DTMF receivers which decode all 16 tone pairs into a 4-bit binary code. These devices incorporate an AGC for wide dynamic range and are suitable for end-to-endsignalling. The M...MT3170B/71B,
Vendor:Other Category:Other
The MT3170B/71B is a family of high performance DTMF receivers which decode all 16 tone pairs into a 4-bit binary code. These devices incorporate an AGC for wide dynamic range and are suitable for end-to-end signalling. ...MT3170B
Vendor:Other Category:Other
The MT3170B is a family of high performance DTMF receivers which decode all 16 tone pairs into a 4-bit binary code. These devices incorporate an AGC for wide dynamic range and are suitable for end-to-endsignalling. The M...MT312
Vendor:Other Category:Other
The MT312 is a QPSK/BPSK 1 to 45MBaud demodulator and channel decoder for digital satellite television transmissions to the European Broadcast Union ETS 300 421 specification (ref. 1). It receives analogue I and Q signal...MT3118-Y-A
Vendor:Other Category:Other
MT3118A-UY-A
Vendor:Other Category:Other
MT3103-Y-A
Vendor:Other Category:Other
MT305-SLUR
Vendor:Other Category:Other
MT2LDT432H (X)(S)
Vendor:Other Category:Other
MT29F8G08FABWP
Vendor:Other Category:Other
NAND technology provides a cost-effective solution for applications requiring highdensity solid-state storage. The MT29F8G08FABWP are 2Gb NAND Flash memory devices. The MT29F4G08BxB and MT29F4G16BxB are two-die stacks th...MT29F4G16BABWP
Vendor:Other Category:Other
NAND technology of MT29F4G16BABWP provides a cost-effective solution for applications requiring highdensity solid-state storage. The MT29F4G16BABWP are 2Gb NAND Flash memory devices. The MT29F4G08BxB and MT29F4G16BxB are...MT29F4G08BABWP
Mfg:Micron Vendor:Other Category:Other
NAND technology of MT29F4G08BABWP provides a cost-effective solution for applications requiring highdensity solid-state storage. The MT29F4G08BABWP are 2Gb NAND Flash memory devices. The MT29F4G08BxB and MT29F4G16BxB are...MT29F2G16AABWP
Vendor:Other Category:Other
NAND technology of MT29F2G16AABWP provides a cost-effective solution for applications requiring highdensity solid-state storage. The MT29F2G16AABWP are 2Gb NAND Flash memory devices. The MT29F4G08BxB and MT29F4G16BxB are...MT29F2G08AABWP
D/C:0804+ Vendor:Other Category:Other
NAND technology provides a cost-effective solution for applications requiring highdensity solid-state storage. The MT29F2G08AABWP are 2Gb NAND Flash memory devices. The MT29F4G08BxB and MT29F4G16BxB are two-die stacks th...MT28S4M16LC
Vendor:Other Category:Other
This SyncFlash® data sheet of MT28S4M16LC is divided into two major sections. The SDRAM Interface Functional Description details compatibility with the SDRAM memory, and the Flash Memory Functional Description specif...MT28F800B5WG-8T
Vendor:Other Category:Other
MT28F800B5WG-8T is a kind of nonvolatile, electrically block-erasable (Flash), programmable read-only memory. It contains 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). It is organized i...MT28F800B5
Mfg:MICRON Pack:TSSOP Vendor:Other Category:Other
The MT28F008B5 (x8) and MT28F800B5 (x16/x8) are nonvolatile, electrically block-erasable (Flash), programmable read-only memories containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits)...MT28F800B3
D/C:04+ Vendor:Other Category:Other
The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes...MT28F642D20
Vendor:Other Category:Other
MT28F642D18
Vendor:Other Category:Other
MT28F640J3,
Vendor:Other Category:Other
The MT28F640J3 is a nonvolatile, electrically blockerasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as ...MT28F400B5
Mfg:SOP Pack:MICRON D/C:06+ Vendor:Other Category:Other
The MT28F642D20 and MT28F642D18 are highperformance, high-density, nonvolatile memory solutions that can significantly improve system performance. This new architecture features a twomemory- bank configuration that suppo...MT28F322P3
Vendor:Other Category:Other
The MT28F322P3 is a high-performance, highdensity, nonvolatile memory solution that can significantly improve system performance. This new architecture features a two-memory-bank configuration that supports background op...MT28F322D20
Vendor:Other Category:Other
The MT28F322D20 and MT28F322D18 are highperformance, high-density, nonvolatile Flash memory solutions that can significantly improve system performance. This new architecture features a two-memorybank configuration that ...MT28F322D18
Vendor:Other Category:Other
The MT28F322D20 and MT28F322D18 are highperformance, high-density, nonvolatile Flash memory solutions that can significantly improve system performance. This new architecture features a two-memorybank configuration that ...MT28F321P20
Vendor:Other Category:Other
MT28F321P18
Vendor:Other Category:Other
MT28F320A18
Vendor:Other Category:Other
The MT28F320A18 is a nonvolatile electrically block-erasable (Flash) memory containing eight 4Kword parameter blocks and sixty-three 32K-word main blocks.The MT28F320A18 allows soft protection for blocks, as read only, b...