Features: ·Low Noise Figure :NF=1.3dB (@f=2GHz) ·High Gain:|S21e|2=12.5dB (@f=2GHz) Specifications Characteristics Symbol Rating Unit Collector-Base voltage VCBO 8 V Collector-Emitter voltage VCEO 4.5 V Emitter-Base voltage VEBO 1.5 V Collector-Current IC 36 ...
MT3S36T: Features: ·Low Noise Figure :NF=1.3dB (@f=2GHz) ·High Gain:|S21e|2=12.5dB (@f=2GHz) Specifications Characteristics Symbol Rating Unit Collector-Base voltage VCBO 8 V Collector-Em...
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·Low Noise Figure :NF=1.3dB (@f=2GHz)
·High Gain:|S21e|2=12.5dB (@f=2GHz)
Characteristics | Symbol | Rating | Unit |
Collector-Base voltage | VCBO | 8 | V |
Collector-Emitter voltage | VCEO | 4.5 | V |
Emitter-Base voltage | VEBO | 1.5 | V |
Collector-Current | IC | 36 | mA |
Base-Current | IB | 18 | mA |
Collector power dissipation | PC | 100 | mW |
Junction temperature | Tj | 150 | °C |
Storage temperature range | Tstg | -55~150 | °C |