MT3S06T

The MT3S06T is a kind of TOSHIBA transistor(silicon NPN epitaxial planar type). MT3S06T has two unique features: (1) low noise figure which is 1.6 dB when VCE is 3 V , Ic is 3 mA and f is 2 GHz; (2) high gain which is 9.5 dB when VCE is 3 V , Ic is 7 mA and f is 2 GHz.

The absolute maximum rating of MT3S06T can be summerized as:(1): collector-base voltage, VCBO is 10 V ; (2): collector-emitter voltage, VCEO is 5 V ; (3): emitter-base voltage, VEBO is 1.5 V; (4): base current, Ic is 15 mA; (5): collector current, IB is 7 mA; (6): collector power dissipation, Pc is 60 mW; (7): junction temperature, Tj is 125; (8): storage temperature range, tstg is -55 to 125.

The electrical characteristics of MT3S06T are:(1): collector cut-off current, ICBO is 0.1 uA max when VCB is 5 V and IE is 0; (2): emitter cut-off current, IEBO is 1 uA max when VEB is 1 V and IC is 0; (3): DC current gain, hFE is 70 min and 140 max when VCE is 1 V and IC is 5 mA; (4): reverse transfer capacitance, Cre is 0.25 pF typ and 0.7 pF max when VCB is 1 V and IE is 0 and f is 1 MHz.