MT28F800B5WG-8T

MT28F800B5WG-8T is a kind of nonvolatile, electrically block-erasable (Flash), programmable read-only memory. It contains 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). It is organized into eleven separately erasable blocks.

There are some features of MT28F800B5WG-8T as follows. (1) eleven erase blocks; (2) eight main memory blocks; (3) advanced 0.18m CMOS floating-gate process; (4) compatible with 0.3m smart 5 device; (5) address access time: 80 ns; (6) 100,000 ERASE cycles; (7) industry-standard pinouts; (8) automated write and erase algorithm; (9) two-cycle WRITE/ERASE sequence; (8) TSOP and SOP packaging options; (9) byte- or word-wide READ and WRITE (1 Meg* 8/512K*16).

The following is about the absolute maximum ratings of MT28F800B5WG-8T. (1): voltage on VCC supply relative to VSS is from -0.5 to +6 V; (2): input voltage relative to VSS is from -0.5 to +6 V; (3): VPP voltage relative to VSS is from -0.5 to +5.5 V; (4): RP# or A9 pin voltage relative to Vss is from -0.5 to +12.6 V; (5): power dissipation is 1 W; (6): temperature under bias is from -40 to +85; (7) storage temperature (plastic) is from -55 to +125.