MT28F800B5

Voltage on V_CC Supply Relative to V_SS ....-0.5V TO +6V**
Input Voltage Relative to V_SS ..................-0.5V TO +6V**
V_PP Voltage Relative TO V_SS ...................-0.5V TO +5.5V†
RP# or A9 Pin Voltage Relative to Vss... -0.5V to +12.6V†
Temperature Under Bias.............................-40 to +85
Storage Temperature (plastic) .................-55 to +125
Power Dissipation .......................................................1W

The MT28F008B5 (x8) and MT28F800B5 (x16/x8) are nonvolatile, electrically block-erasable (Flash), programmable read-only memories containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing or erasing the device is done with a 5V VPP voltage, while all operations are performed with a 5V V_CC. Due to process technology advances, 5V V_PP of MT28F800B5 is optimal for application and production programming. These devices are fabricated with Micron's advanced 0.18µm CMOS floating-gate process.

The MT28F008B5 and MT28F800B5 are organized into eleven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures.