Features: • Flexible dual-bank architectureSupport for true concurrent operation with zero latency Read bank a during program bank b and vice versa Read bank a during erase bank b and vice versa• Basic configuration: Seventy-one erasable blocks Bank a (4Mb for data storage) Bank b (28M...
MT28F321P20: Features: • Flexible dual-bank architectureSupport for true concurrent operation with zero latency Read bank a during program bank b and vice versa Read bank a during erase bank b and vice ver...
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Features: • Stacked die Combo package Includes two 64Mb Flash devices Choice of either one 3...
Features: • Stacked die Combo package Includes two 64Mb Flash devices Choice of either one 3...
Voltage to Any Ball Except VCC and VPP
with Respect to VSS .......................... -0.5V to +2.45V
VPP Voltage (for BLOCK ERASE and PROGRAM
with Respect to VSS) ...................... -0.5V to +13.5V**
VCC and VCCQ Supply Voltage
with Respect to VSS ........................... -0.3V to +2.45V
Output Short Circuit Current .............................100mA
Operating Temperature Range ............ -40 to +85
Storage Temperature Range .............. -55 to +125
Soldering Cycle ...................................... 260oC for 10s