MT28F321P20

Features: • Flexible dual-bank architectureSupport for true concurrent operation with zero latency Read bank a during program bank b and vice versa Read bank a during erase bank b and vice versa• Basic configuration: Seventy-one erasable blocks Bank a (4Mb for data storage) Bank b (28M...

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SeekIC No. : 004429688 Detail

MT28F321P20: Features: • Flexible dual-bank architectureSupport for true concurrent operation with zero latency Read bank a during program bank b and vice versa Read bank a during erase bank b and vice ver...

floor Price/Ceiling Price

Part Number:
MT28F321P20
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Flexible dual-bank architecture
   Support for true concurrent operation with zero
     latency
    Read bank a during program bank b and vice
      versa
    Read bank a during erase bank b and vice versa
• Basic configuration:
    Seventy-one erasable blocks
    Bank a (4Mb for data storage)
    Bank b (28Mb for program storage)
• VCC, VCCQ, VPP voltages*
    1.70V (MIN), 1.90V (MAX) VCC, VCCQ
       (MT28F321P18)
    1.80V (MIN), 2.20V (MAX) VCC, VCCQ
       (MT28F321P20)
     0.9V (MIN) VPP (in-system PROGRAM/ERASE)
     12V ±5% (HV) VPP tolerant (factory
        programming compatibility)
• Random access time: 70ns and 80ns @ 1.80V VCC*
• Page Mode read access*
    Eight-word page
    Interpage read access: 70ns/80ns @ 1.80V
    Intrapage read access: 30ns @ 1.80V
• Low power consumption (VCC = 2.20V)
   Asynchronous READ < 15mA
   Standby < 50A
   Automatic power save (APS) feature
• Enhanced write and erase suspend options
   ERASE-SUSPEND-to-READ within same bank
   PROGRAM-SUSPEND-to-READ within same bank
   ERASE-SUSPEND-to-PROGRAM within same bank
• Dual 64-bit chip protection registers for security
    purposes
• Cross-compatible command support
Extended command set
    Common flash interface
• PROGRAM/ERASE cycle
    100,000 WRITE/ERASE cycles per block



Specifications

Voltage to Any Ball Except VCC and VPP
with Respect to VSS .......................... -0.5V to +2.45V
VPP Voltage (for BLOCK ERASE and PROGRAM
with Respect to VSS) ...................... -0.5V to +13.5V**
VCC and VCCQ Supply Voltage
with Respect to VSS ........................... -0.3V to +2.45V
Output Short Circuit Current .............................100mA
Operating Temperature Range ............ -40  to +85

Storage Temperature Range .............. -55  to +125
Soldering Cycle ...................................... 260oC for 10s




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