MT28F800B3

Voltage on V_CC Supply
Relative to V_SS ........................................-0.5V to +4V**
Input Voltage Relative to V_SS ..................-0.5V to +4V**
VPP Voltage Relative to V_SS ....................-0.5V to +5.5V†
RP# or A9 Pin Voltage
Relative to V_SS ................................ ...-0.5V to +12.6V††
Temperature Under Bias .......................... -10  to +80
Storage Temperature (plastic) ............... -55  to +125
Power Dissipation .......................................................1W

The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasing the device is done with a V_PP voltage of either 3.3V or 5V, while all operations are performed with a 3.3V V_CC. Due to process technology advances, 5V V_PP of MT28F800B3 is optimal for application and production programming. These devices are fabricated with Micron's advanced 0.18µm CMOS floating-gate process.

The MT28F008B3 and MT28F800B3 are organized into eleven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. This block may be used to store code implemented n low-level system recovery. The remaining blocks of MT28F800B3 vary in density and are written and erased with no additional security measures.